19 A - 600 V - very fast IGBT

文件：511.88 Kbytes 页数：18 Pages

STMICROELECTRONICS

意法半导体

19 A - 600 V - very fast IGBT

Description This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior. Features ■ Low on-voltage drop (VCE(sat)) ■ High frequency operation Applications ■ High frequency motor drives ■ SMPS and PFC i

文件：663.63 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

19 A - 600 V - very fast IGBTE[

文件：524.83 Kbytes 页数：18 Pages

STMICROELECTRONICS

意法半导体

19 A - 600 V - very fast IGBT

文件：511.88 Kbytes 页数：18 Pages

STMICROELECTRONICS

意法半导体