GVT71512C18T-6.7中文资料赛普拉斯数据手册PDF规格书

Functional Description

The Cypress Synchronous Burst SRAM family employs high-speed, low power CMOS designs using advanced triple-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high valued resistors.

Features

• Fast access times: 2.5 ns, 3.0 ns, and 3.5 ns

• Fast clock speed: 225 MHz, 200 MHz, 166 MHz, and 150 MHz

• Fast OE access times: 2.5 ns, 3.0 ns, and 3.5 ns

• Optimal for performance (two cycle chip deselect, depth expansion without wait state)

• 3.3V –5 and +10 power supply

• 3.3V or 2.5V I/O supply

• 5V tolerant inputs except I/Os

• Clamp diodes to VSS at all inputs and outputs

• Common data inputs and data outputs

• Byte Write Enable and Global Write control

• Multiple chip enables for depth expansion: three chip enables for TA(GVTI)/A(CY) package version and two chip enables for B(GVTI)/BG(CY) and T(GVTI)/AJ(CY) package versions

• Address pipeline capability

• Address, data and control registers

• Internally self-timed Write Cycle

• Burst control pins (interleaved or linear burst sequence)

• Automatic power-down for portable applications

• JTAG boundary scan for B and T package version

• Low profile 119-bump, 14-mm x 22-mm PBGA (Ball Grid Array) and 100-pin TQFP packages