GTVA126001FC-V1-R2中文资料WOLFSPEED数据手册PDF规格书

厂商型号	GTVA126001FC-V1-R2
功能描述	Thermally-Enhanced High Power RF GaN HEMT 600 W, 50 V, DC – 1.4 GHz
文件大小	443.12 Kbytes
页面数量	8 页
生产厂商	WOLFSPEED, INC.
企业简称	WOLFSPEED
中文名称	WOLFSPEED, INC.官网
原厂标识
数据手册	下载地址一下载地址二到原厂下载
更新时间	2025-5-24 15:01:00
人工找货	GTVA126001FC-V1-R2价格和库存，欢迎联系客服免费人工找货

Description

The GTVA126001EC and GTVA126001FC are 600-watt GaN on SiC high

electron mobility transistors (HEMT) for use in the DC - 1.4 GHz frequecy

band. They feature input matching, high efficiency, and thermallyenhanced packages.

Features

• GaN on SiC HEMT technology

• Input matched

• Typical pulsed CW performance (class AB), 1200 MHz,

50 V, 300 µs pulse width, 10 duty cycle

- Output power (P3dB) = 600 W

- Drain efficiency = 65

- Gain = 18 dB

• Capable of withstanding a 10:1 load

mismatch (all phase angles) at 600 W peak power

under pulsed conditions: 300 µs pulse width, 10

duty cycle, VDD = 50 V, IDQ = 100 mA

• Human Body Model Class 1C (per AnSI/ESDA/JEDEC

JS-001)

• Pb-free and RoHS compliant