Discrete IGBTs

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Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications

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TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT

High Power Switching Applications · Enhancement mode type · High speed: tf = 0.40 µs (max) (IC =80 A) · Low saturation voltage: VCE (sat)= 2.9V (max) (IC =80 A)

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N CHANNEL MOS TYPE (HIGH POWER SWITCHING APPLICATIONS)

Discrete IGBTs (PDF:875KB) 03/2011 : http://toshiba.semicon-storage.com/info/docget.jsp?did=7429 * GT30G124 - Breakdown Voltage VCES(V) @Ta = 25C : 430V - IGBT Current Rating IC(A) @Ta = 25C : 200A * GT30J124 - Breakdown Voltage VCES(V) @Ta = 25C : 600V - IGBT Current Rating IC(

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Discrete IGBTs

文件：835.68 Kbytes 页数：16 Pages

TOSHIBA

东芝