GT80J101A

Discrete IGBTs

GT80J101A

Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications

GT80J101

DiscreteIGBTs

GT80J101

NCHANNELMOSTYPE(HIGHPOWERSWITCHINGAPPLICATIONS)

DiscreteIGBTs(PDF:875KB)03/2011: http://toshiba.semicon-storage.com/info/docget.jsp?did=7429 *GT30G124 -BreakdownVoltageVCES(V)@Ta=25C:430V -IGBTCurrentRatingIC(A)@Ta=25C:200A *GT30J124 -BreakdownVoltageVCES(V)@Ta=25C:600V -IGBTCurrentRatingIC(

GT80J101B

TOSHIBAInsulatedGateBipolarTransistorSiliconNChannelIGBT

HighPowerSwitchingApplications ·Enhancementmodetype ·Highspeed:tf=0.40µs(max)(IC=80A) ·Lowsaturationvoltage:VCE(sat)=2.9V(max)(IC=80A)