High Power Switching Applications Motor Control Applications

High Power Switching Applications Motor Control Applications • Fourth-generation IGBT • Enhancement mode type • High speed: tf = 0.10 μs (typ.) • Low saturation voltage: VCE (sat) = 1.75 V (typ.) • FRD included between emitter and collector

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Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

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Insulated Gate Bipolar Transistor Silicon N Channel IGBT

• The 4th Generation\r\n• Enhancement-Mode\r\n• High Speed: tf = 0.10 µs (typ.)\r\n• Low Saturation Voltage: VCE (sat) = 1.75 V (typ.)\r\n• FRD included between Emitter and collector.;

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Silicon N Channel IGBT High Power Switching Applications

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