首页 >GSE-132M>规格书列表
零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
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QUADRUPLEPOSITIVE-NANDGATESWITHSCHMITT-TRIGGERINPUTS | TITexas Instruments 德州仪器美国德州仪器公司 | TI | ||
Quad2-InputNANDGatewithSchmitt-TriggerInputsHigh?뭁erformanceSilicon?묰ateCMOS TheMC74HC132AisidenticalinpinouttotheLS132.Thedevice inputsarecompatiblewithstandardCMOSoutputs;withpull−up resistors,theyarecompatiblewithLSTTLoutputs. TheHC132Acanbeusedtoenhancenoiseimmunityortosquareup slowlychangingwaveforms. Features •OutputDri | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
Quad2-InputNANDGatewithSchmitt-TriggerInputsHigh?뭁erformanceSilicon?묰ateCMOS TheMC74HC132AisidenticalinpinouttotheLS132.Thedevice inputsarecompatiblewithstandardCMOSoutputs;withpull−up resistors,theyarecompatiblewithLSTTLoutputs. TheHC132Acanbeusedtoenhancenoiseimmunityortosquareup slowlychangingwaveforms. Features •OutputDri | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
RadiationHardenedQuad2-InputNANDSchmittTrigger Description TheIntersilHCS132MSisaRadiationHardenedQuad2-InputNANDSchmittTriggerinputs.AhighonbothinputsforcestheoutputtoaLowstate. TheHCS132MSutilizesadvancedCMOS/SOStechnologytoachievehigh-speedoperation.Thisdeviceisamemberofradiationhardened,high-spee | Intersil Intersil Corporation | Intersil | ||
RadiationHardenedQuad2-InputNANDSchmittTrigger Features •3MicronRadiationHardenedSOSCMOS •TotalDose200KRAD(Si) •SEPEffectiveLETNoUpsets:>100MEV-cm2/mg •SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s •DoseRateUpset>1010RAD(Si)/s20nsPulse •Cos | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
RadiationHardenedQuad2-InputNANDSchmittTrigger Description TheIntersilHCS132MSisaRadiationHardenedQuad2-InputNANDSchmittTriggerinputs.AhighonbothinputsforcestheoutputtoaLowstate. TheHCS132MSutilizesadvancedCMOS/SOStechnologytoachievehigh-speedoperation.Thisdeviceisamemberofradiationhardened,high-spee | Intersil Intersil Corporation | Intersil | ||
RadiationHardenedQuad2-InputNANDSchmittTrigger Features •3MicronRadiationHardenedSOSCMOS •TotalDose200KRAD(Si) •SEPEffectiveLETNoUpsets:>100MEV-cm2/mg •SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s •DoseRateUpset>1010RAD(Si)/s20nsPulse •Cos | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
RadiationHardenedQuad2-InputNANDSchmittTrigger Description TheIntersilHCS132MSisaRadiationHardenedQuad2-InputNANDSchmittTriggerinputs.AhighonbothinputsforcestheoutputtoaLowstate. TheHCS132MSutilizesadvancedCMOS/SOStechnologytoachievehigh-speedoperation.Thisdeviceisamemberofradiationhardened,high-spee | Intersil Intersil Corporation | Intersil | ||
RadiationHardenedQuad2-InputNANDSchmittTrigger Features •3MicronRadiationHardenedSOSCMOS •TotalDose200KRAD(Si) •SEPEffectiveLETNoUpsets:>100MEV-cm2/mg •SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s •DoseRateUpset>1010RAD(Si)/s20nsPulse •Cos | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
RadiationHardenedQuad2-InputNANDSchmittTrigger Description TheIntersilHCS132MSisaRadiationHardenedQuad2-InputNANDSchmittTriggerinputs.AhighonbothinputsforcestheoutputtoaLowstate. TheHCS132MSutilizesadvancedCMOS/SOStechnologytoachievehigh-speedoperation.Thisdeviceisamemberofradiationhardened,high-spee | Intersil Intersil Corporation | Intersil |
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