POWER MOSFET

GTM

勤益投资控股

P-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件：279.17 Kbytes 页数：5 Pages

GTM

勤益投资控股

P-Channel Enhancement-Mode MOSFET (-30V, -5.3A)

Features • RDS(on)=60mΩ@VGS=-10V, ID=-5.3A • RDS(on)=90mΩ@VGS=-4.5V, ID=-4.2A • Advanced Trench Process Technology • High Density Cell Design for Ultra Low On-Resistance • Fully Characterized Avalanche Voltage and Current • Improved Shoot-Through FOM

文件：41.23 Kbytes 页数：4 Pages

HSMC

华昕

P-Channel Enhancement Mode Power MOSFET

文件：579.11 Kbytes 页数：7 Pages

HMSEMI

华之美半导体