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KB817BC	文件：213.48 Kbytes Page：8 Pages	GENERALPURPOSEHIGHISOLATIONVOLTAGESINGLETRANSISTORTYPEPHOTOCOUPLERSERIES DESCRIPTION 1.TheKB817(1-channel)isopticallycoupledisolatorscontainingaGaASlightemittingdiodeandanNPNsiliconphototransistor. 2.Theleadpitchis2.54mm. 3.Solidinsulationthicknessbetweenemittingdiodeandoutputphototransistor:>=0.6mm. FEATURES 1.Highisolationvolta	KingbrightKingbright Company LLC 今台电子今台电子股份有限公司	Kingbright
KB817BC-B	文件：221.69 Kbytes Page：8 Pages	GENERALPURPOSEHIGHISOLATIONVOLTAGESINGLETRANSISTORTYPEPHOTOCOUPLERSERIES DESCRIPTION 1.TheKB817-B(1-channel)isopticallycoupledisolatorscontainingaGaASlightemittingdiodeandanNPNsiliconphototransistor. 2.Theleadpitchis2.54mm. 3.Solidinsulationthicknessbetweenemittingdiodeandoutputphototransistor:>=0.6mm. FEATURES 1.Leadforming(gull	KingbrightKingbright Company LLC 今台电子今台电子股份有限公司	Kingbright
KB817BD	文件：213.48 Kbytes Page：8 Pages	GENERALPURPOSEHIGHISOLATIONVOLTAGESINGLETRANSISTORTYPEPHOTOCOUPLERSERIES DESCRIPTION 1.TheKB817(1-channel)isopticallycoupledisolatorscontainingaGaASlightemittingdiodeandanNPNsiliconphototransistor. 2.Theleadpitchis2.54mm. 3.Solidinsulationthicknessbetweenemittingdiodeandoutputphototransistor:>=0.6mm. FEATURES 1.Highisolationvolta	KingbrightKingbright Company LLC 今台电子今台电子股份有限公司	Kingbright
KB817BD-B	文件：221.69 Kbytes Page：8 Pages	GENERALPURPOSEHIGHISOLATIONVOLTAGESINGLETRANSISTORTYPEPHOTOCOUPLERSERIES DESCRIPTION 1.TheKB817-B(1-channel)isopticallycoupledisolatorscontainingaGaASlightemittingdiodeandanNPNsiliconphototransistor. 2.Theleadpitchis2.54mm. 3.Solidinsulationthicknessbetweenemittingdiodeandoutputphototransistor:>=0.6mm. FEATURES 1.Leadforming(gull	KingbrightKingbright Company LLC 今台电子今台电子股份有限公司	Kingbright
KB817C	文件：213.48 Kbytes Page：8 Pages	GENERALPURPOSEHIGHISOLATIONVOLTAGESINGLETRANSISTORTYPEPHOTOCOUPLERSERIES DESCRIPTION 1.TheKB817(1-channel)isopticallycoupledisolatorscontainingaGaASlightemittingdiodeandanNPNsiliconphototransistor. 2.Theleadpitchis2.54mm. 3.Solidinsulationthicknessbetweenemittingdiodeandoutputphototransistor:>=0.6mm. FEATURES 1.Highisolationvolta	KingbrightKingbright Company LLC 今台电子今台电子股份有限公司	Kingbright
KB817C-B	文件：221.69 Kbytes Page：8 Pages	GENERALPURPOSEHIGHISOLATIONVOLTAGESINGLETRANSISTORTYPEPHOTOCOUPLERSERIES DESCRIPTION 1.TheKB817-B(1-channel)isopticallycoupledisolatorscontainingaGaASlightemittingdiodeandanNPNsiliconphototransistor. 2.Theleadpitchis2.54mm. 3.Solidinsulationthicknessbetweenemittingdiodeandoutputphototransistor:>=0.6mm. FEATURES 1.Leadforming(gull	KingbrightKingbright Company LLC 今台电子今台电子股份有限公司	Kingbright
KB817CD	文件：213.48 Kbytes Page：8 Pages	GENERALPURPOSEHIGHISOLATIONVOLTAGESINGLETRANSISTORTYPEPHOTOCOUPLERSERIES DESCRIPTION 1.TheKB817(1-channel)isopticallycoupledisolatorscontainingaGaASlightemittingdiodeandanNPNsiliconphototransistor. 2.Theleadpitchis2.54mm. 3.Solidinsulationthicknessbetweenemittingdiodeandoutputphototransistor:>=0.6mm. FEATURES 1.Highisolationvolta	KingbrightKingbright Company LLC 今台电子今台电子股份有限公司	Kingbright
KB817CD-B	文件：221.69 Kbytes Page：8 Pages	GENERALPURPOSEHIGHISOLATIONVOLTAGESINGLETRANSISTORTYPEPHOTOCOUPLERSERIES DESCRIPTION 1.TheKB817-B(1-channel)isopticallycoupledisolatorscontainingaGaASlightemittingdiodeandanNPNsiliconphototransistor. 2.Theleadpitchis2.54mm. 3.Solidinsulationthicknessbetweenemittingdiodeandoutputphototransistor:>=0.6mm. FEATURES 1.Leadforming(gull	KingbrightKingbright Company LLC 今台电子今台电子股份有限公司	Kingbright
KB817D	文件：213.48 Kbytes Page：8 Pages	GENERALPURPOSEHIGHISOLATIONVOLTAGESINGLETRANSISTORTYPEPHOTOCOUPLERSERIES DESCRIPTION 1.TheKB817(1-channel)isopticallycoupledisolatorscontainingaGaASlightemittingdiodeandanNPNsiliconphototransistor. 2.Theleadpitchis2.54mm. 3.Solidinsulationthicknessbetweenemittingdiodeandoutputphototransistor:>=0.6mm. FEATURES 1.Highisolationvolta	KingbrightKingbright Company LLC 今台电子今台电子股份有限公司	Kingbright
KB817D-B	文件：221.69 Kbytes Page：8 Pages	GENERALPURPOSEHIGHISOLATIONVOLTAGESINGLETRANSISTORTYPEPHOTOCOUPLERSERIES DESCRIPTION 1.TheKB817-B(1-channel)isopticallycoupledisolatorscontainingaGaASlightemittingdiodeandanNPNsiliconphototransistor. 2.Theleadpitchis2.54mm. 3.Solidinsulationthicknessbetweenemittingdiodeandoutputphototransistor:>=0.6mm. FEATURES 1.Leadforming(gull	KingbrightKingbright Company LLC 今台电子今台电子股份有限公司	Kingbright

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详细参数

型号：
GSBC817
制造商：
GTM
制造商全称：
GTM
功能描述：
NPN EPITAXIAL PLANAR TRANSISTOR

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市永贝尔科技有限公司	GSBC817	GTM	23+	NA	39960	只做进口原装,终端工厂免费送样	询价
深圳兆威电子有限公司	GSBC817	GTM	23+	SOT-323	63000	原装正品现货	询价
深圳市宏捷佳电子科技有限公司	GSBC817-25	Good-Ark Semiconductor	25+	TO-236-3 SC-59 SOT-23-3	9350	独立分销商公司只做原装诚心经营免费试样正品保证	询价
深圳市博浩通科技有限公司	GSBC847-A	GTM	23+	SOT-323	6680	全新原装优势	询价
深圳市威尔健半导体有限公司	GSBC847-A	GTM	23+	SOT-323	50000	全新原装正品现货,支持订货	询价
贸泽芯城（深圳）电子科技有限公司	GSBC847-A	GTM	23+	SOT-323	36810	原厂授权一级代理,专业海外优势订货,价格优势、品种	询价
深圳市威雅利发展有限公司	GSBC847-A	GTM	06+	SOT-323	2080	一级代理,专注军工、汽车、医疗、工业、新能源、电力	询价
深圳市得捷芯城科技有限公司	GSBC847-A	GTM	24+	NA/	5330	原装现货,当天可交货,原型号开票	询价
深圳市原品电子科技有限公司	GSBF02R12-502-MC1806	EUCHNER	23+	SENSOR	128	全新、原装	询价
深圳市振宏微科技有限公司	GSBS74-330M	CHINAXYJ	23+	SMD	9868	专做原装正品,假一罚百!	询价

更多GSBC817供应商更新时间2025-6-13 14:56:00

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