GENERAL PURPOSE HIGH ISOLATION VOLTAGE SINGLE TRANSISTOR TYPE PHOTOCOUPLER SERIES

DESCRIPTION 1. The KB817 (1-channel) is optically coupled isolators containing a GaAS light emitting diode and an NPN silicon phototransistor. 2. The lead pitch is 2.54mm. 3. Solid insulation thickness between emitting diode and output phototransistor:>=0.6mm. FEATURES 1. High isolation volta

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Kingbright

今台电子

GENERAL PURPOSE HIGH ISOLATION VOLTAGE SINGLE TRANSISTOR TYPE PHOTOCOUPLER SERIES

DESCRIPTION 1. The KB817-B (1-channel) is optically coupled isolators containing a GaAS light emitting diode and an NPN silicon phototransistor. 2. The lead pitch is 2.54mm. 3. Solid insulation thickness between emitting diode and output phototransistor:>=0.6mm. FEATURES 1. Lead forming (gull

文件：221.69 Kbytes 页数：8 Pages

Kingbright

今台电子

GENERAL PURPOSE HIGH ISOLATION VOLTAGE SINGLE TRANSISTOR TYPE PHOTOCOUPLER SERIES

DESCRIPTION 1. The KB817 (1-channel) is optically coupled isolators containing a GaAS light emitting diode and an NPN silicon phototransistor. 2. The lead pitch is 2.54mm. 3. Solid insulation thickness between emitting diode and output phototransistor:>=0.6mm. FEATURES 1. High isolation volta

文件：213.48 Kbytes 页数：8 Pages

Kingbright

今台电子

GENERAL PURPOSE HIGH ISOLATION VOLTAGE SINGLE TRANSISTOR TYPE PHOTOCOUPLER SERIES

DESCRIPTION 1. The KB817-B (1-channel) is optically coupled isolators containing a GaAS light emitting diode and an NPN silicon phototransistor. 2. The lead pitch is 2.54mm. 3. Solid insulation thickness between emitting diode and output phototransistor:>=0.6mm. FEATURES 1. Lead forming (gull

文件：221.69 Kbytes 页数：8 Pages

Kingbright

今台电子

NPN Silicon AF Transistors

Features ● For general AF applications. ● High collector current. ● High current gain. ● Low collector-emitter saturation voltage.

文件：40.49 Kbytes 页数：1 Pages

KEXIN

科信电子