18Mb 誇1x2Lp CMOS I/O Double Data Rate SigmaRAM

Functional Description Because SigmaRAMs are synchronous devices, address data inputs and read/write control inputs are captured on the rising edge of the input clock. Write cycles are internally self-timed and initiated by the rising edge of the clock input. This feature eliminates complex off-c

文件：716.12 Kbytes 页数：29 Pages

GSI

18Mb 誇1x2Lp CMOS I/O Double Data Rate SigmaRAM

Functional Description Because SigmaRAMs are synchronous devices, address data inputs and read/write control inputs are captured on the rising edge of the input clock. Write cycles are internally self-timed and initiated by the rising edge of the clock input. This feature eliminates complex off-c

文件：716.12 Kbytes 页数：29 Pages

GSI

18Mb 誇1x2Lp CMOS I/O Double Data Rate SigmaRAM

Functional Description Because SigmaRAMs are synchronous devices, address data inputs and read/write control inputs are captured on the rising edge of the input clock. Write cycles are internally self-timed and initiated by the rising edge of the clock input. This feature eliminates complex off-c

文件：716.12 Kbytes 页数：29 Pages

GSI

18Mb 誇1x2Lp CMOS I/O Double Data Rate SigmaRAM

Functional Description Because SigmaRAMs are synchronous devices, address data inputs and read/write control inputs are captured on the rising edge of the input clock. Write cycles are internally self-timed and initiated by the rising edge of the clock input. This feature eliminates complex off-c

文件：716.12 Kbytes 页数：29 Pages

GSI

18Mb 誇1x2Lp CMOS I/O Double Data Rate SigmaRAM

Functional Description Because SigmaRAMs are synchronous devices, address data inputs and read/write control inputs are captured on the rising edge of the input clock. Write cycles are internally self-timed and initiated by the rising edge of the clock input. This feature eliminates complex off-c

文件：716.12 Kbytes 页数：29 Pages

GSI

18Mb 誇1x2Lp CMOS I/O Double Data Rate SigmaRAM

Functional Description Because SigmaRAMs are synchronous devices, address data inputs and read/write control inputs are captured on the rising edge of the input clock. Write cycles are internally self-timed and initiated by the rising edge of the clock input. This feature eliminates complex off-c

文件：716.12 Kbytes 页数：29 Pages

GSI

18Mb 誇1x2Lp CMOS I/O Double Data Rate SigmaRAM

Functional Description Because SigmaRAMs are synchronous devices, address data inputs and read/write control inputs are captured on the rising edge of the input clock. Write cycles are internally self-timed and initiated by the rising edge of the clock input. This feature eliminates complex off-c

文件：716.12 Kbytes 页数：29 Pages

GSI

18Mb 誇1x2Lp CMOS I/O Double Data Rate SigmaRAM

Functional Description Because SigmaRAMs are synchronous devices, address data inputs and read/write control inputs are captured on the rising edge of the input clock. Write cycles are internally self-timed and initiated by the rising edge of the clock input. This feature eliminates complex off-c

文件：716.12 Kbytes 页数：29 Pages

GSI

18Mb 誇1x2Lp CMOS I/O Double Data Rate SigmaRAM

Functional Description Because SigmaRAMs are synchronous devices, address data inputs and read/write control inputs are captured on the rising edge of the input clock. Write cycles are internally self-timed and initiated by the rising edge of the clock input. This feature eliminates complex off-c

文件：716.12 Kbytes 页数：29 Pages

GSI