首页 >GS7303ACTD-R>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
DualN-ChannelMOSFET GenerationVTechnology UltraLowOn-Resistance SurfaceMount Dynamicdv/dtRating FastSwitching Lead-Free VDS(V)=30V ID=5.3A RDS(ON)50m(VGS=-10V) RDS(ON)80m(VGS=-4.5V) Features TheSOP-8hasbeenmodiedthroughacustomizec leadframeforenhancedthermalcharacteristic | UMWGuangdong Youtai Semiconductor Co., Ltd. 友台半导体广东友台半导体有限公司 | UMW | ||
DualN-ChannelMOSFET Features GenerationVTechnology UltraLowOn-Resistance SurfaceMount Dynamicdv/dtRating FastSwitching Lead-Free VDS(V)=30V ID=5.3A RDS(ON) | EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED 翊欧翊欧半导体 | EVVOSEMI | ||
PowerMOSFET(Vdss=30V,Rds(on)=0.050ohm) Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor, | IRF International Rectifier | IRF | ||
GenerationVTechnology | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
GenerationVTechnology Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor, | IRF International Rectifier | IRF | ||
GENERATIONVTECHNOLOGY | IRF International Rectifier | IRF | ||
HEXFETPowerMOSFET(VDSS=30V,RDS(on)=0.050廓) Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor, | IRF International Rectifier | IRF | ||
HEXFETPowerMOSFET | IRF International Rectifier | IRF | ||
DualN-ChannelMOSFET Features GenerationVTechnology UltraLowOn-Resistance SurfaceMount Dynamicdv/dtRating FastSwitching Lead-Free VDS(V)=30V ID=5.3A RDS(ON) | EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED 翊欧翊欧半导体 | EVVOSEMI | ||
DualN-ChannelMOSFET GenerationVTechnology UltraLowOn-Resistance SurfaceMount Dynamicdv/dtRating FastSwitching Lead-Free VDS(V)=30V ID=5.3A RDS(ON)50m(VGS=-10V) RDS(ON)80m(VGS=-4.5V) Features TheSOP-8hasbeenmodiedthroughacustomizec leadframeforenhancedthermalcharacteristic | UMWGuangdong Youtai Semiconductor Co., Ltd. 友台半导体广东友台半导体有限公司 | UMW |
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