GS66506T中文资料GAN数据手册PDF规格书

特性 Features

• 650 V enhancement mode power transistor

• Top-side cooled configuration

• RDS(on) = 67 mΩ

• IDS(max) = 22.5 A

• Ultra-low FOM die

• Low inductance GaNPX® package

• Simple gate drive requirements (0 V to 6 V)

• Transient tolerant gate drive (-20 / +10 V)

• Very high switching frequency (> 10 MHz)

• Fast and controllable fall and rise times

• Reverse current capability

• Zero reverse recovery loss

• Small 5.6 x 4.5 mm2 PCB footprint

• Dual gate pads for optimal board layout

• RoHS3 (6 + 4) compliant

Applications

• AC-DC Converters

• DC-DC converters

• Uninterruptable Power Supplies

• Industrial Motor Drives

• Appliance Motor Drives

• Fast Battery Charging

• Class D Audio amplifiers

• Wireless Power Transfer

描述 Description

The GS66506T is an enhancement mode GaN-on-silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. GaN Systems innovates with industry leading advancements such as patented Island Technology® and GaNPX® packaging. Island Technology® cell layout realizes high-current die and high yield. GaNPX® packaging enables low inductance & low thermal resistance in a small package. The GS66506T is a top-side cooled transistor that offers very low junction-to-case thermal resistance for demanding high power applications. These features combine to provide very high efficiency power switching.