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HA1002

1.1-1.7GHzLowNoiseAmplifier

HBH

HBH Microwave GmbH

HAF1002

SiliconPChannelMOSFETSeriesPowerSwitching

Features ThisFEThastheovertemperatureshut–downcapabilitysensingtothejunctiontemperature.ThisFEThasthebuilt–inovertemperatureshut–downcircuitinthegatearea.Andthiscircuitoperationtoshut–downthegatevoltageincaseofhighjunctiontemperaturelikeapplyingoverpowe

HitachiHitachi Semiconductor

日立日立公司

HAF1002

SiliconPChannelMOSFETSeriesPowerSwitching

Description ThisFEThastheovertemperatureshut-downcapabilitysensingtothejunctiontemperature.ThisFEThasthebuilt-inovertemperatureshut-downcircuitinthegatearea.Andthiscircuitopertiontoshut-downthegatevoltageincaseofhighjunctiontemperaturelikeapplyingover

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

HAF1002L

SiliconPChannelMOSFETSeriesPowerSwitching

Features ThisFEThastheovertemperatureshut–downcapabilitysensingtothejunctiontemperature.ThisFEThasthebuilt–inovertemperatureshut–downcircuitinthegatearea.Andthiscircuitoperationtoshut–downthegatevoltageincaseofhighjunctiontemperaturelikeapplyingoverpowe

HitachiHitachi Semiconductor

日立日立公司

HAF1002L

SiliconPChannelMOSFETSeriesPowerSwitching

Description ThisFEThastheovertemperatureshut-downcapabilitysensingtothejunctiontemperature.ThisFEThasthebuilt-inovertemperatureshut-downcircuitinthegatearea.Andthiscircuitopertiontoshut-downthegatevoltageincaseofhighjunctiontemperaturelikeapplyingover

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

HAF1002S

SiliconPChannelMOSFETSeriesPowerSwitching

Features ThisFEThastheovertemperatureshut–downcapabilitysensingtothejunctiontemperature.ThisFEThasthebuilt–inovertemperatureshut–downcircuitinthegatearea.Andthiscircuitoperationtoshut–downthegatevoltageincaseofhighjunctiontemperaturelikeapplyingoverpowe

HitachiHitachi Semiconductor

日立日立公司

HAF1002S

SiliconPChannelMOSFETSeriesPowerSwitching

Description ThisFEThastheovertemperatureshut-downcapabilitysensingtothejunctiontemperature.ThisFEThasthebuilt-inovertemperatureshut-downcircuitinthegatearea.Andthiscircuitopertiontoshut-downthegatevoltageincaseofhighjunctiontemperaturelikeapplyingover

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

HAL1002

ProgrammerBoard

MICRONAS

Micronas

HAL1002

HighlyPreciseProgrammableHall-EffectSwitch

Introduction TheHallprogrammerboardV5.1isageneral-purposeprogramminginterfacewhichiscapableofaddressingtheprogrammableMicronasHall-effectsensorfamiliesHAL8xyandHAL100x. TheHallprogrammerboardV5.1isfullysoftwarecompatibletotheHallprogrammerboardV4.1.Henc

MICRONAS

Micronas

HBO1002W

LampsforPhotolithography

Description PerkinElmerOptoelectronicsisaleadingmanufacturerofmercuryshortarclampsranginginoutputpowerfrom1000to8000watts.Theselampsareusedintheproductionofprintedcircuitboards,liquidcrystaldisplaysandsemiconductors.TheHSHSerieslampsareusedworldwideinmi

PerkinElmer

PerkinElmer Optoelectronics

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