型号：RT9818C-21PV；Package：SOT-23；Micro-Power Voltage Detectors

文件：159.69 Kbytes 页数：14 Pages

立锜科技

型号：RT9818C-21PV；Package：SOT-23；Micro-Power Voltage Detectors

文件：215.67 Kbytes 页数：14 Pages

立锜科技

型号：GS-065-030-6-LR-MR；Package：8x8-mm-PDFN；700 V E-mode GaN transistor Datasheet

Features • 700 V enhancement mode power transistor • 850 V transient drain-to-source voltage • Bottom-cooled, 8x8 mm PDFN package • RDS(on) = 37 mΩ • IDS,max = 40 A / IDSmax,Pulse = 67 A • Simple gate drive requirements (0 V to 6 V) • Transient tolerant gate drive (-20 V / +10 V) • High sw

文件：893.34 Kbytes 页数：16 Pages

GAN

GaN Systems

型号：GS-065-030-6-LR-TR；Package：8x8-mm-PDFN；700 V E-mode GaN transistor Datasheet

Features • 700 V enhancement mode power transistor • 850 V transient drain-to-source voltage • Bottom-cooled, 8x8 mm PDFN package • RDS(on) = 37 mΩ • IDS,max = 40 A / IDSmax,Pulse = 67 A • Simple gate drive requirements (0 V to 6 V) • Transient tolerant gate drive (-20 V / +10 V) • High sw

文件：893.34 Kbytes 页数：16 Pages

GAN

GaN Systems

型号：GS-065-004-1-L；650 V E-mode GaN transistor

Features • 650 V enhancement mode power transistor • 850 V transient drain-to-source voltage • Bottom-cooled, small 5x6 mm PDFN package • RDS(on) = 450 mΩ • IDSmax,DC = 4 A / IDSmax,Pulse = 7.1 A • Ultra-low FOM • Simple gate drive requirements (0 V to 6 V) • Transient tolerant gate drive

文件：1.06041 Mbytes 页数：16 Pages

GAN

GaN Systems

型号：GS-065-004-6-L；700 V E-mode GaN transistor Datasheet

Features • 700 V enhancement mode power transistor • 850 V transient drain-to-source voltage • Bottom-cooled, small 5x6 mm PDFN package • RDS(on) = 315 mΩ • IDSmax,DC = 4.6 A / IDSmax,Pulse = 7.8 A • Ultra-low FOM • Simple gate drive requirements (0 V to 6 V) • Transient tolerant gate driv

文件：786.37 Kbytes 页数：16 Pages

GAN

GaN Systems

型号：GS-065-008-1-L；650 V E-mode GaN transistor

Features • 650 V enhancement mode power transistor • 850 V transient drain-to-source voltage • Bottom-cooled, small 5x6 mm PDFN package • RDS(on) = 225 mΩ • IDSmax,DC= 8 A / IDSmax,Pulse = 13.5 A • Ultra-low FOM • Simple gate drive requirements (0 V to 6 V) • Transient tolerant gate drive

文件：1.0679 Mbytes 页数：16 Pages

GAN

GaN Systems

型号：GS-065-008-6-L；700 V E-mode GaN transistor Datasheet

Features • 700 V enhancement mode power transistor • 850 V transient drain-to-source voltage • Bottom-cooled, small 5x6 mm PDFN package • RDS(on) = 165 mΩ • IDSmax,DC= 8.8 A / IDSmax,Pulse = 14.8 A • Ultra-low FOM • Simple gate drive requirements (0 V to 6 V) • Transient tolerant gate driv

文件：801.44 Kbytes 页数：16 Pages

GAN

GaN Systems

型号：GS-065-008-6-L-MR；700 V E-mode GaN transistor Datasheet

Features • 700 V enhancement mode power transistor • 850 V transient drain-to-source voltage • Bottom-cooled, small 5x6 mm PDFN package • RDS(on) = 165 mΩ • IDSmax,DC= 8.8 A / IDSmax,Pulse = 14.8 A • Ultra-low FOM • Simple gate drive requirements (0 V to 6 V) • Transient tolerant gate driv

文件：801.44 Kbytes 页数：16 Pages

GAN

GaN Systems

型号：GS-065-008-6-L-TR；700 V E-mode GaN transistor Datasheet

Features • 700 V enhancement mode power transistor • 850 V transient drain-to-source voltage • Bottom-cooled, small 5x6 mm PDFN package • RDS(on) = 165 mΩ • IDSmax,DC= 8.8 A / IDSmax,Pulse = 14.8 A • Ultra-low FOM • Simple gate drive requirements (0 V to 6 V) • Transient tolerant gate driv

文件：801.44 Kbytes 页数：16 Pages

GAN

GaN Systems