首页 >GRP-DATA-JANSG2N7269>规格书列表

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JANSF2N7269U	文件：1.6901 Mbytes Page：13 Pages	RadiationHardenedPowerMOSFETSurfaceMount(SMD-1)200V,26A,N-channel,RadHardHEXFET™Technology Features Singleeventeffect(SEE)hardened LowRDS(on) Lowtotalgatecharge Simpledriverequirements Hermeticallysealed Electricallyisolated Ceramiceyelets Lightweight SurfaceMount ESDrating:Class3AperMIL-STD-750,Method1020 PotentialApplications 	IRF International Rectifier	IRF
JANSG2N7269U	文件：1.6901 Mbytes Page：13 Pages	RadiationHardenedPowerMOSFETSurfaceMount(SMD-1)200V,26A,N-channel,RadHardHEXFET™Technology Features Singleeventeffect(SEE)hardened LowRDS(on) Lowtotalgatecharge Simpledriverequirements Hermeticallysealed Electricallyisolated Ceramiceyelets Lightweight SurfaceMount ESDrating:Class3AperMIL-STD-750,Method1020 PotentialApplications 	IRF International Rectifier	IRF
JANSR2N7269	文件：264.68 Kbytes Page：12 Pages	RADIATIONHARDENEDPOWERMOSFETTHRU-HOLE RADIATIONHARDENEDPOWERMOSFETTHRU-HOLE(TO-254AA) InternationalRectifier’sRAD-HardTMHEXFET®technologyprovideshighperformancepowerMOSFETsforspaceapplications.Thistechnologyhasoveradecadeofprovenperformanceandreliabilityinsatelliteapplications.Thesedeviceshavebeen	IRF International Rectifier	IRF
JANSR2N7269U	文件：1.6901 Mbytes Page：13 Pages	RadiationHardenedPowerMOSFETSurfaceMount(SMD-1)200V,26A,N-channel,RadHardHEXFET™Technology Features Singleeventeffect(SEE)hardened LowRDS(on) Lowtotalgatecharge Simpledriverequirements Hermeticallysealed Electricallyisolated Ceramiceyelets Lightweight SurfaceMount ESDrating:Class3AperMIL-STD-750,Method1020 PotentialApplications 	IRF International Rectifier	IRF

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