RF Power LDMOS Transistor N−Channel Enhancement−Mode Lateral MOSFET

This 93 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 1427 to 1517 MHz. Features • Advanced high performance in−package Doherty • Greater negative gate−source voltage range for improved Class C operation

文件：385.37 Kbytes 页数：17 Pages

恩XP

RF Power LDMOS Transistors

N--Channel Enhancement--Mode Lateral MOSFETs These 32 W RF power LDMOS transistors are designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 1805 to 1880 MHz. Features  Designed for Wide Instantaneous Bandwidt

文件：468.68 Kbytes 页数：15 Pages

恩XP

Package：1210（3225 公制）；包装：卷带（TR）剪切带（CT） 类别：电容器 陶瓷电容器 描述：CAP CER 10UF 50V X5R 1210

MURATA1

村田

Package：1210（3225 公制）；包装：卷带（TR）剪切带（CT） 类别：电容器 陶瓷电容器 描述：CAP CER 10UF 50V X5R 1210

MURATA1

村田