包装：散装 类别：RF/IF，射频/中频和 RFID RF 配件 描述：MOUNT MGM 3/4 58A

TE Connectivity Laird

Linear Hall Sensors

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TDK

东电化

N-Channel Enhancement Mode Field Effect Transistor

文件：76.28 Kbytes 页数：1 Pages

etc2List of Unclassifed Manufacturers

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N-Channel Enhancement Mode Field Effect Transistor

General Description This Power MOSFET is produced using planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. This devices is specially well suited for half bridge and full bridge resonant

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Huashan

华汕电子器件