Airfast RF Power GaN Transistor

This 24 dBm RF power GaN transistor is designed for cellular base station applications covering the frequency range of 2496 to 2690 MHz. Features • High terminal impedances for optimal broadband performance • Designed for low complexity linearization systems • Universal broadband driver •

文件：207.73 Kbytes 页数：13 Pages

恩XP

N--Channel Enhancement--Mode Lateral MOSFET

Features  Advanced high performance in--package Doherty  Greater negative gate--source voltage range for improved Class C operation  Designed for digital predistortion error correction systems

文件：805.06 Kbytes 页数：23 Pages

恩XP

RF Power GaN Transistor

文件：379.6 Kbytes 页数：9 Pages

恩XP

Package：0805（2012 公制）；包装：卷带（TR） 类别：电容器 陶瓷电容器 描述：CAP CER 8.2PF 250V NP0 0805

Murata Electronics

Package：0805（2012 公制）；包装：卷带（TR） 类别：电容器 陶瓷电容器 描述：CAP CER 8.2PF 250V NP0 0805

Murata Electronics