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MDP18N50BTH

N-ChannelMOSFET500V,18.0A,0.27(ohm)

MGCHIP

MagnaChip Semiconductor.

MDP18N50BTH

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=18A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.27Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

MDP18N50TH

N-ChannelMOSFET500V,18.0A,0.27(ohm)

MGCHIP

MagnaChip Semiconductor.

MDP18N50TH

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=18A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.27Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

MDQ18N50G

N-ChannelMOSFET500V,20.0A,0.27(ohm)

MGCHIP

MagnaChip Semiconductor.

MDQ18N50GTH

N-ChannelMOSFET500V,20.0A,0.27(ohm)

MGCHIP

MagnaChip Semiconductor.

MDQ18N50GTP

N-ChannelMOSFET500V,20.0A,0.27(ohm)

MGCHIP

MagnaChip Semiconductor.

MDQ18N50GTP

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=20A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.27Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

MS18N50

500VN-channelMOSFET

BWTECH

Bruckewell Technology LTD

MSF18N50

500VN-ChannelMOSFET

BWTECH

Bruckewell Technology LTD

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