首页 >GP11016SCL>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
Diode | JIEJIEJIEJIE MICROELECTRONICS CO.,Ltd 捷捷微电江苏捷捷微电子股份有限公司 | JIEJIE | ||
MF-MSMFSeries-PTCResettableFuses | BournsBourns Electronic Solutions 伯恩斯 | Bourns | ||
MF-MSMFSeries-PTCResettableFuses | BournsBourns Electronic Solutions 伯恩斯 | Bourns | ||
MF-MSMFSeries-PTCResettableFuses | BournsBourns Electronic Solutions 伯恩斯 | Bourns | ||
SILICONPLANARDARLINGTONPOWERTRANSISTORS | CDIL Continental Device India Limited | CDIL | ||
DARLINGTONPOWERTRANSISTORSCOMPLEMENTARYSILICON High-CurrentComplementarySiliconTransistors ...foruseasoutputdevicesincomplementarygeneralpurposeamplifierapplications. •HighDCCurrentGain—hFE=1000(Min)@IC–20Adc •MonolithicConstructionwithBuilt–inBaseEmitterShuntResistor •JunctionTemperatureto+200°C | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
High-CurrentComplementarySiliconTransistors | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
iscSiliconNPNDarlingtonPowerTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
SiliconPNPDarlingtonPowerTransistor | ZSELECZibo Seno Electronic Engineering Co.,Ltd 淄博圣诺电子淄博圣诺电子工程有限公司 | ZSELEC | ||
COMPLEMENTARYSILICONPOWERDARLINGTONTRANSISTORS COMPLEMENTARYSILICONPOWERDARLINGTONTRANSISTORS ..designedforuseasoutputdevicesincomplementarygeneralpurposeamplifierapplications. FEATURES: *HighGainDarlingtonPerformance *HighDCCurrentGainhFE=1000(Min)@lc=20A *MonolithicConstructionwithBuilt-inBase-EmitterS | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | NJSEMI |
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