首页 >GOFORCE4001>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
BroadbandLNA/LinearDriver0.1—6.0GHz Features Reference:3.3V/45mA/2.5GHz •EVBNF:0.9dB •Gain:15.5dB •OIP3:30.5dBm •OP1dB:16.5dBm •FlexibleBiasVoltageandCurrent •InternallyMatchedto50Ω •Process:GaAspHEMT Applications •LinearDriverAmplifier •SmallCellsandCellularRepeaters •DistributedA | GUERRILLA Guerrilla RF, Inc. | GUERRILLA | ||
RFPOWERGANTRANSISTOR | Polyfet Polyfet RF Devices | Polyfet | ||
READ-ONLYCONTACTLESSIDENTIFICATIONDEVICE Description TheH4001isaCMOSintegratedcircuitforuseintransponders.Thecircuitispoweredbyanexternalcoilplacedinamagneticfield,andgetsitsclockfromthesamefieldviaoneofthecoilterminals.Theothercoilterminalisaffectedbythemodulator,turningonandoffthemod | EMMICRO EM Microelectronic - MARIN SA | EMMICRO | ||
READ-ONLYCONTACTLESSIDENTIFICATIONDEVICE Description TheH4001isaCMOSintegratedcircuitforuseintransponders.Thecircuitispoweredbyanexternalcoilplacedinamagneticfield,andgetsitsclockfromthesamefieldviaoneofthecoilterminals.Theothercoilterminalisaffectedbythemodulator,turningonandoffthemod | EMMICRO EM Microelectronic - MARIN SA | EMMICRO | ||
NORGATE DESCRIPTION TheHCC4000B,HCC4001B,HCC4002BandHCC4025B(extendedtemperaturerange)andHCF4000B,HCF4001B,HCF4002BandHCF4025B(intermediatetemperaturerange)aremonolithicintegratedcircuit,availablein14-leaddualinlineplasticorceramicpackageandplasticmicropackage. .PRO | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | ||
RadHardenedhighvoltagecomplementaryMOSlogicseries | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | ||
NORGATE DESCRIPTION TheHCC4000B,HCC4001B,HCC4002BandHCC4025B(extendedtemperaturerange)andHCF4000B,HCF4001B,HCF4002BandHCF4025B(intermediatetemperaturerange)aremonolithicintegratedcircuit,availablein14-leaddualinlineplasticorceramicpackageandplasticmicropackage. .PRO | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | ||
Rad-hard,highvoltage,CMOSlogicseries Features •ESCCqualified •18VAbsolutemaximumratings •3Vto15Voperatingvoltage •Hermeticpackages •Rad-hard100krad(Si)TID •SELimmuneupto119MeV.cm²/mg •SEUimmuneupto119MeV.cm²/mg •-55°Cto+125°Ctemperaturerange •ESCCspecificationavailableonESCCwebsi | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | ||
Rad-hardhighvoltageCMOSlogicseries | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | ||
Rad-hard,highvoltage,CMOSlogicseries Features •ESCCqualified •18VAbsolutemaximumratings •3Vto15Voperatingvoltage •Hermeticpackages •Rad-hard100krad(Si)TID •SELimmuneupto119MeV.cm²/mg •SEUimmuneupto119MeV.cm²/mg •-55°Cto+125°Ctemperaturerange •ESCCspecificationavailableonESCCwebsi | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS |
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