INA828

INA851Precision,Low-Noise,FullyDifferentialOutputInstrumentationAmplifierWithAttenuatingGainandOutputClamping

1Features •Gainprogrammablefrom G=0.2to10,000byusingexternalresistor •Fullydifferentialoutputswithintegratedclamping •Lowoffsetvoltage:10μV(typ),35μV(max) •Lowoffsetdrift:0.1μV/°C(typ),0.3μV/°C(max) •Lowinputbiascurrent:5nA(typ) •Inputstagenoise

INA828

INA630Precision,126dBCMRR,IndirectCurrentFeedbackInstrumentationAmplifier

1Features •Optimizedforcostandsizesensitiveapplications •Super-betabipolarprecision: –Highcommon-moderejection:126dB (minimum)forG=20V/Vto1000V/V –Lowoffsetvoltage:50μV(typical),350μV (maximum) –Lowoffsetvoltagedrift:0.5μV/ºC(typical), 2μV/°C(maximum) –L

INA828ID

50-uVOffset,7-nVNoise,Low-Power,PrecisionInstrumentationAmplifier

INA828IDR

50-uVOffset,7-nVNoise,Low-Power,PrecisionInstrumentationAmplifier

IQXO-828

CrystalClockOscillatorSpecification

K828

JunctionBoxes

KRC828E

EPITAXIALPLANARNPNTRANSISTOR(SWITCHING,INTERFACECIRCUITANDDRIVERCIRCUIT)

SWITCHINGAPPLICATION. INTERFACECIRCUITANDDRIVERCIRCUITAPPLICATION. FEATURES •WithBuilt-inBiasResistors. •SimplifyCircuitDesign. •ReduceaQuantityofPartsandManufacturingProcess. •HighPackingDensity.

KRC828U

EPITAXIALPLANARNPNTRANSISTOR(SWITCHING,INTERFACECIRCUITANDDRIVERCIRCUIT)

SWITCHINGAPPLICATION. INTERFACECIRCUITANDDRIVERCIRCUITAPPLICATION. FEATURES ●WithBuilt-inBiasResistors. ●SimplifyCircuitDesign. ●ReduceaQuantityofPartsandManufacturingProcess. ●HighPackingDensity.

LM828

SwitchedCapacitorVoltageConverter

LM828

LM828SwitchedCapacitorVoltageConverter