丝印：INA828；Package：SOIC(D)；INA828 50-μV Offset, 7-nV/√Hz Noise, Low-Power, Precision Instrumentation Amplifier

1 Features 1• Precision Instrumentation Amplifier Evolution: – Second Generation: INA828 – First Generation: INA128 • Low Offset Voltage: 50 μV, MAX • Gain Drift: 5 ppm/°C (G = 1), 50 ppm/°C (G > 1) • Noise: 7 nV/√Hz • Bandwidth: 2 MHz (G = 1), 260 kHz (G = 100) • Stable with 1-nF Capaciti

文件：1.68827 Mbytes 页数：40 Pages

TI

德州仪器

50-uV Offset, 7-nV Noise, Low-Power, Precision Instrumentation Amplifier

文件：1.37892 Mbytes 页数：33 Pages

TI

德州仪器

丝印：INA828；Package：SOIC(D)；INA828 50-μV Offset, 7-nV/√Hz Noise, Low-Power, Precision Instrumentation Amplifier

1 Features 1• Precision Instrumentation Amplifier Evolution: – Second Generation: INA828 – First Generation: INA128 • Low Offset Voltage: 50 μV, MAX • Gain Drift: 5 ppm/°C (G = 1), 50 ppm/°C (G > 1) • Noise: 7 nV/√Hz • Bandwidth: 2 MHz (G = 1), 260 kHz (G = 100) • Stable with 1-nF Capaciti

文件：1.68827 Mbytes 页数：40 Pages

TI

德州仪器

Crystal Clock Oscillator Specification

文件：1.00419 Mbytes 页数：2 Pages

IQD

Junction Boxes

文件：42.29 Kbytes 页数：2 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

EPITAXIAL PLANAR NPN TRANSISTOR (SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT)

SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES • With Built-in Bias Resistors. • Simplify Circuit Design. • Reduce a Quantity of Parts and Manufacturing Process. • High Packing Density.

文件：89.75 Kbytes 页数：4 Pages

KEC

KEC(Korea Electronics)