INA823

INA630Precision,126dBCMRR,IndirectCurrentFeedbackInstrumentationAmplifier

1Features •Optimizedforcostandsizesensitiveapplications •Super-betabipolarprecision: –Highcommon-moderejection:126dB (minimum)forG=20V/Vto1000V/V –Lowoffsetvoltage:50μV(typical),350μV (maximum) –Lowoffsetvoltagedrift:0.5μV/ºC(typical), 2μV/°C(maximum) –L

INA823DGKR

INA823Precision,Low-Power,Wide-Supply(2.7-Vto36-V)InstrumentationAmplifier

INA823DGKT

INA823Precision,Low-Power,Wide-Supply(2.7-Vto36-V)InstrumentationAmplifier

INA823DR

INA823Precision,Low-Power,Wide-Supply(2.7-Vto36-V)InstrumentationAmplifier

INA823DT

INA823Precision,Low-Power,Wide-Supply(2.7-Vto36-V)InstrumentationAmplifier

IPM-C823

MiniatureIntegratedPowerMonitor

IPM-L823

MiniatureIntegratedPowerMonitor

IQXO-823

CrystalClockOscillatorSpecification

IRF823

N-ChannelPowerMOSFETs,3.0A,450V/500V

IRF823

N-CHANNELPOWERMOSFETS

FEATURES ●LowerRDS(ON) ●Improvedinductiveruggedness ●Fastswitchingtimes ●Ruggedpolysilicongatecellstructure ●Lowerinputcapacitance ●Extendedsafeoperatingarea ●Improvedhightemperaturereliability