BUZ358

SIPMOSPowerTransistor(NchannelEnhancementmodeAvalanche-rated)

•Nchannel •Enhancementmode •Avalanche-rated

BUZ358

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=4.5A@TC=25℃ ·DrainSourceVoltage :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=2.6Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive

BYM358DX

Damper-Modulatorfast,high-voltage

GENERALDESCRIPTION CombineddamperandmodulatordiodesinanisolatedplasticenvelopeforhorizontaldeflectioninPCmonitors. TheBYM358DXcontainsdiodeswithperformancecharacteristicsdesignedspecificallyforapplicationsfrom32kHzto120kHz TheBYM358DXseriesissuppliedinthecon

BYM358X

Damper-Modulatorfast,high-voltage

GENERALDESCRIPTION CombineddamperandmodulatordiodesinanisolatedplasticenvelopeforhorizontaldeflectioninPCmonitors. TheBYM358Xcontainsdiodeswithperformancecharacteristicsdesignedspecificallyforapplicationsfrom32kHzto120kHzTheBYM358Xseriesissuppliedintheconven

C358C

LOWPOWERDUALOPERATIONALAMPLIFIERS

SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN

GM358

LOWPOWERDUALOPERATIONALAMPLIFERS

GM358

DUALOPERATIONALAMPLIFIER

GM358

Op-AmpComparators

Op-Amp.&Comparators Op-Amp.&VoltageReference AudioAmplifier

GPLM358

DUALOPERATIONALAMPLIFIER

GPLM358

DUALOPERATIIONALAMPLIIFIIER

GSCLM358

DUALOPERATIONALAMPLIFIER

GSCLM358

DUALOPERATIONALAMPLIFIER

HLM358

LOWPOWERDUALOPERATIONALAMPLIFIERS

Description Thesedevicesconsistoftwoindependent,highgain,internallyfrequencycompensatedoperationalamplifiersdesignedoperatefromasinglesupplyoverawiderangeofvoltages.Operationfromsplitsuppliesalsoispossibleifthedifferencebetweenthetwosuppliesis3Vto32V,a

HLM358

LowPowerDualOperationalAmplifiers

HLM358P

LOWPOWERDUALOPERATIONALAMPLIFIERS

Description Thesedevicesconsistoftwoindependent,highgain,internallyfrequencycompensatedoperationalamplifiersdesignedoperatefromasinglesupplyoverawiderangeofvoltages.Operationfromsplitsuppliesalsoispossibleifthedifferencebetweenthetwosuppliesis3Vto32V,a

HLM358S

LOWPOWERDUALOPERATIONALAMPLIFIERS

Description Thesedevicesconsistoftwoindependent,highgain,internallyfrequencycompensatedoperationalamplifiersdesignedoperatefromasinglesupplyoverawiderangeofvoltages.Operationfromsplitsuppliesalsoispossibleifthedifferencebetweenthetwosuppliesis3Vto32V,a

HVC358B

VariableCapacitanceDiodeforVCO

Features •Highcapacitanceratio.(n=2.20.min) •Lowseriesresistance.(rs=0.4max) •GoodC-Vlinearity. •UltrasmallFlatPackage(UFP)issuitableforsurfacemountdesign.

HVC358B

VariableCapacitanceDiodeforVCO

FEATURES •Highcapacitanceratio.(n=2.20.min) •Lowseriesresistance.(rs=0.4Ωmax) •GoodC-Vlinearity. •UltrasmallFlatPackage(UFP)issuitableforsurfacemountdesign.

HVC358B

VariableCapacitanceDiodeforVCO

Features •Highcapacitanceratio.(n=2.2min) •Lowseriesresistance.(rs=0.4Ωmax) •GoodC-Vlinearity. •UltrasmallFlatPackage(UFP)issuitableforsurfacemountdesign.

HVD358B

VariableCapacitanceDiodeforVCO

Features •Highcapacitanceratio.(n=2.20min) •Lowseriesresistance.(rs=0.40Ωmax) •GoodC-Vlinearity. •SupersmallFlatLeadPackage(SFP)issuitableforsurfacemountdesign.