丝印：GIPN3HD60-H；Package：NDIP-26L；SLLIMM-nano IPM, 3 A, 600 V 3-phase inverter bridge IGBT

Features • IPM 3 A, 600 V, 3-phase IGBT inverter bridge including control ICs for gate driving and freewheeling diodes • Optimized for low electromagnetic interferences • VCE(sat) negative temperature coefficient • 3.3 V, 5 V, 15 V CMOS/TTL input comparators with hysteresis and pull-down/ pu

文件：1.12897 Mbytes 页数：21 Pages

STMICROELECTRONICS

意法半导体