NPN EPITAXIAL PLANAR TRANSISTOR

Description The GIJ1060 is designed for relay drivers, high-speed inverters, converters and other general large-current switching. Features • Low Collector-Emitter Saturation Voltage : VCE (sat) =0.4V (Max.) @ IC=3A, IB=0.3A,

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GTM

勤益投资控股

N P N E P I T A X I A L P L A N A R T R A N S I S T O R

文件：402.06 Kbytes 页数：3 Pages

ETL

亚历电子

NPN EPITAXIAL PLANAR TRANSISTOR

GTM

勤益投资控股

SWITCHMODE??Power Rectifiers

SCHOTTKY BARRIER RECTIFIERS 10 AMPERES 60 to 100 VOLTS . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Guard–Ring for Stress Protection • Low Forward Voltage • 150°C Operating Junction Temperature • Guara

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MOTOROLA

摩托罗拉

2.5 V HIGH PRECISION REFERENCE VOLTAGE CIRCUIT

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

文件：53.4 Kbytes 页数：8 Pages

NEC

瑞萨

2.5 V HIGH PRECISION REFERENCE VOLTAGE CIRCUIT

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

文件：53.4 Kbytes 页数：8 Pages

NEC

瑞萨