PNP SILICON EPITAXIAL PLANAR TRANSISTOR

Description The GI1182 is designed for medium power amplifier applications. Features • Low collector saturation voltage : VCE(sat)=-0.5V(Typ.)

文件：280.42 Kbytes 页数：2 Pages

GTM

勤益投资控股

P N P S I L I C O N E P I T A X I A L P L A N A R T R A N S I S T O R

文件：283.53 Kbytes 页数：2 Pages

ETL

亚历电子

PNP SILICON EPITAXIAL PLANAR TRANSISTOR

GTM

勤益投资控股

NP SILICON EPITAXIAL PLANAR TRANSISTOR

Description The GJ1182 is designed for medium power amplifier applications. Features • Low collector saturation voltage : VCE(sat)=-0.5V(Typ.)

文件：278.91 Kbytes 页数：2 Pages

GTM

勤益投资控股

P N P S I L I C O N E P I T A X I A L P L A N A R T R A N S I S T O R

文件：282.01 Kbytes 页数：2 Pages

ETL

亚历电子

GENERAL PURPOSE TRANSISTOR

文件：328.07 Kbytes 页数：4 Pages

HOTTECH

合科泰