NP60N03SUG

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=3.8mΩMAX.(VGS=10V,ID=30A) •Highcurrentrating ID(DC)=±60A •Lowinputcapacitance Ciss=5000pFTYP. •DesignedforautomotiveapplicationandAEC

NP60N03SUG

N-Channel30-V(D-S)MOSFET

NP60N03SUG

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=60A@TC=25℃ ·DrainSourceVoltage-VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=3.8mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

NTD60N03

PowerMOSFET60Amps,28Volts

NTD60N03

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=60A@TC=25℃ ·DrainSourceVoltage-VDSS=28V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=7.5mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

P60N03LDG

N-Channel30-V(D-S)MOSFET

P60N03LR

N-Channel30-V(D-S)MOSFET

PHB60N03LT

N-Channel30V(D-S)175째CMOSFET

SDB60N03L

N-ChannelLogicLevelEnhancementModeFieldEffectTransistor

FEATURES ●SuperhighdensecelldesignforextremelylowRDS(ON). ●Highpowerandcurrenthandlingcapability. ●TO-220&TO-263package.

SDP60N03L

N-ChannelLogicLevelEnhancementModeFieldEffectTransistor

FEATURES ●SuperhighdensecelldesignforextremelylowRDS(ON). ●Highpowerandcurrenthandlingcapability. ●TO-220&TO-263package.