| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
RadiationHardenedQuad2-InputNANDSchmittTrigger Description TheIntersilHCTS132MSisaRadiationHardenedQuad2-InputNANDSchmittTriggerinputs.AhighonbothinputsforcestheoutputtoaLowstate. TheHCTS132MSutilizesadvancedCMOS/SOStechnologytoachievehigh-speedoperation.Thisdeviceisamemberofradiationhardened,high-sp | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
RadiationHardenedQuad2-InputNANDSchmittTrigger Description TheIntersilHCTS132MSisaRadiationHardenedQuad2-InputNANDSchmittTriggerinputs.AhighonbothinputsforcestheoutputtoaLowstate. TheHCTS132MSutilizesadvancedCMOS/SOStechnologytoachievehigh-speedoperation.Thisdeviceisamemberofradiationhardened,high-sp | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
WidebandRF/PulseTransformer5-200MHz/1-100MHz | SIRENZASIRENZA 圆通微波上海圆通微波电子有限公司 | SIRENZA | ||
T-1(3mm)HighIntensityLEDLamps Description ThisfamilyofT-1lampsisspeciallydesignedforapplicationsrequiringhigheron-axisintensitythanisachievablewithastandardlamp.Thelightgeneratedisfocusedtoanarrowbeamtoachievethiseffect. Features •HighIntensity •Choiceof3BrightColors HighEffici | HPAgilent(Hewlett-Packard) 安捷伦科技安捷伦科技有限公司 | HP | ||
GaAsMMICHIGH-ISOLATION GeneralDescription TheHMC132chipisafast,broadbandSPDTswitchfeaturinghigh(40dB)isolationovertheentireband,providedbyon-chipgroundvias.Theswitchisnon-reflectiveatboththeRF1andRF2ports.Anegativecontrolvoltageof0/-5Vdcto0/-7Vdccontrolsthechannelsele | Hittite HITTITE | Hittite | ||
HIGHDENSITYCARDEDGE.050[1.27]VESAMICROCHANNELARCHITECTURE(MCA) | ADAM-TECHAdam Technologies, Inc. 亚当科技亚当科技股份有限公司 | ADAM-TECH | ||
HIGHDENSITYCARDEDGE.050[1.27]VESAMICROCHANNELARCHITECTURE(MCA) | ADAM-TECHAdam Technologies, Inc. 亚当科技亚当科技股份有限公司 | ADAM-TECH | ||
DigitalPressureSensor | ALPSALPS Electric 阿尔卑斯阿尔卑斯电气株式会社 | ALPS | ||
SiliconEpitaxialPlanarPinDiode Features ●Lowcapacitance.(C=0.5pFmax) ●Lowforwardresistance.(rf=2.0Ωmax) | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | KEXIN | ||
SiliconEpitaxialPlanarPinDiodeforAntennaSwitching Features •Lowcapacitance.(C=0.5pFmax) •Lowforwardresistance.(rf=2.0Ωmax) •UltrasmallFlatPackage(UFP)issuitableforsurfacemountdesign. | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
SiliconEpitaxialPlanarPinDiodeforHighFrequencySwitching Features •Lowcapacitance.(C=0.5pFmax) •Lowforwardresistance.(rf=2.0Ωmax) •UltrasmallFlatPackage(UFP)issuitableforsurfacemountdesign. | HitachiHitachi, Ltd. 日立公司 | Hitachi | ||
SiliconEpitaxialPlanarPinDiodeforHighFrequencySwitching Features •Lowcapacitance.(C=0.5pFmax) •Lowforwardresistance.(rf=2.0Ωmax) •SupersmallFlatPackage(SFP)issuitableforsurfacemountdesign. | HitachiHitachi, Ltd. 日立公司 | Hitachi | ||
SiliconEpitaxialPlanarPinDiodeforAntennaSwitching Features •Lowcapacitance.(C=0.5pFmax) •Lowforwardresistance.(rf=2.0Ωmax) •SupersmallFlatPackage(SFP)issuitableforsurfacemountdesign. | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
SiliconEpitaxialPlanarPinDiodeforHighFrequencySwitching Features •Lowcapacitance.(C=0.5pFmax) •Lowforwardresistance.(rf=2.0Ωmax) •UltrasmallResinPackage(URP)issuitableforsurfacemountdesign. | HitachiHitachi, Ltd. 日立公司 | Hitachi | ||
SiliconEpitaxialPlanarPinDiode Features ●Lowcapacitance.(C=1.0pFmax) ●Lowforwardresistance.(rf=0.7Ωmax) | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | KEXIN | ||
PROGRAMMABLEFLEXPC™CLOCKFORP4PROCESSOR FEATURES: •3PLLarchitecture •USB48has180°phasedifferencefromDOT48andVCH •3V66leadPCI1.5nsto3.5ns •Band-gapcircuitfordifferentialoutput •Highpower-noiserejectionratio •100MHzto200MHzCPUfrequency •VCOfrequencyupto1.1G •Supportindexblockread/write •A | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
PROGRAMMABLEFLEXPC™CLOCKFORP4PROCESSOR FEATURES: •3PLLarchitecture •USB48has180°phasedifferencefromDOT48andVCH •3V66leadPCI1.5nsto3.5ns •Band-gapcircuitfordifferentialoutput •Highpower-noiserejectionratio •100MHzto200MHzCPUfrequency •VCOfrequencyupto1.1G •Supportindexblockread/write •A | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
INA592High-Precision,Wide-Bandwidthe-trim??DifferenceAmplifier | TITexas Instruments 德州仪器美国德州仪器公司 | TI | ||
INA597High-Precision,Wide-Bandwidthe-trim??DifferenceAmplifier | TITexas Instruments 德州仪器美国德州仪器公司 | TI | ||
LowPower,Single-SupplyDIFFERENCEAMPLIFIER | BURR-BROWNTexas Instruments Incorporated 德州德州仪器 | BURR-BROWN |
晶体管资料
- 型号：
- 别名：
三极管、晶体管、晶体三极管
- 生产厂家：
- 制作材料：
Ge-PNP
- 性质：
调频 （FM）_前置放大 （V）
- 封装形式：
直插封装
- 极限工作电压：
- 最大电流允许值：
- 最大工作频率：
85MHZ
- 引脚数：
4
- 可代换的型号：
AF124,AF200,3AK20A,
- 最大耗散功率：
- 放大倍数：
- 图片代号：
D-18
- vtest：
0
- htest：
85000000
- atest：
0
- wtest：
0
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
CW |
20+ |
开关元件 |
7896 |
就找我吧!--邀您体验愉快问购元件! |
询价 | ||
CW-IND |
23+ |
NA |
2673 |
专做原装正品,假一罚百! |
询价 | ||
CW-IND |
21+ |
35200 |
一级代理/放心采购 |
询价 | |||
DIODES-美台 |
24+25+/26+27+ |
车规-晶振器件 |
9417 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
询价 | ||
Nichibutsu |
22+ |
DIP40 |
3629 |
原装优势!房间现货!欢迎来电! |
询价 | ||
EUROQUARTZ |
23+ |
NA |
39960 |
只做进口原装,终端工厂免费送样 |
询价 | ||
BTLFUSE |
1911+ |
DIP |
250000 |
大量房间现货PPTC |
询价 | ||
ST/MOTO |
21+ROHS |
CAN to-39 |
32687 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | ||
CHN |
23+ |
DIP |
10000 |
全新原装 |
询价 | ||
ST |
23+ |
TO-TO-220F |
33500 |
全新原装真实库存含13点增值税票! |
询价 |
