首页 >GEIC-164>规格书列表
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P-CHANNELENHANCEMENTMODEPOWERMOSFET Description TheGM164providethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,low on-resistanceandcost-effectiveness. TheGM164isuniversallypreferredforallcommercial-industrialsurfacemountapplicationsandsuitedforlow voltageapplicationssucha | GTMGTM CORPORATION 勤益投资控股勤益投资控股股份有限公司 | GTM | ||
GPAlkalineCellBattery1.5Volts BENEFITS: -Lastslongerinvariouskindsof smallportableelectronicdevices | GPGPB International Limited. 金山电池国际有限公司 | GP | ||
8-BitSerial-Input/Parallel-Output8-BitSerial-Input/Parallel-OutputShiftRegister TheSL74HC164isidenticalinpinouttotheLS/ALS164.ThedeviceinputsarecompatiblewithstandardCMOSoutputs;withpullupresistors,theyarecompatiblewithLS/ALSTTLoutputs. TheSL74HC164isan8-bit,serial-inputtoparallel-outputshiftregister.Twoserialdatainputs,A1andA2,are | SLS System Logic Semiconductor | SLS | ||
RadiationHardened8-BitSerial-In/Parallel-OutRegister Description TheIntersilHCS164MSisaRadiationHardened8-bitSerial-In/Parallel-OutShiftRegisterthathasfullysynchronousserialdataentryandanasynchronousmasterreset. TheHCS164MSutilizesadvancedCMOS/SOStechnologytoachievehigh-speedoperation.Thisdeviceisamemberofradi | Intersil Intersil Corporation | Intersil | ||
RadiationHardened8-BitSerial-In/Parallel-OutRegister | Intersil Intersil Corporation | Intersil | ||
RadiationHardened8-BitSerial-In/Parallel-OutRegister Features •3MicronRadiationHardenedCMOSSOS •TotalDose200KRAD(Si) •SEPEffectiveLETNoUpsets:>100MEV-cm2/mg •SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s •DoseRateUpset>1010RAD(Si)/s20nsPulse •Lat | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
RadiationHardened8-BitSerial-In/Parallel-OutRegister | Intersil Intersil Corporation | Intersil | ||
RadiationHardened8-BitSerial-In/Parallel-OutRegister Description TheIntersilHCS164MSisaRadiationHardened8-bitSerial-In/Parallel-OutShiftRegisterthathasfullysynchronousserialdataentryandanasynchronousmasterreset. TheHCS164MSutilizesadvancedCMOS/SOStechnologytoachievehigh-speedoperation.Thisdeviceisamemberofradi | Intersil Intersil Corporation | Intersil | ||
RadiationHardened8-BitSerial-In/Parallel-OutRegister Features •3MicronRadiationHardenedCMOSSOS •TotalDose200KRAD(Si) •SEPEffectiveLETNoUpsets:>100MEV-cm2/mg •SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s •DoseRateUpset>1010RAD(Si)/s20nsPulse •Lat | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
RadiationHardened8-BitSerial-In/Parallel-OutRegister Description TheIntersilHCS164MSisaRadiationHardened8-bitSerial-In/Parallel-OutShiftRegisterthathasfullysynchronousserialdataentryandanasynchronousmasterreset. TheHCS164MSutilizesadvancedCMOS/SOStechnologytoachievehigh-speedoperation.Thisdeviceisamemberofradi | Intersil Intersil Corporation | Intersil |
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