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GE28F256L18B85中文资料英特尔数据手册PDF规格书

GE28F256L18B85
厂商型号

GE28F256L18B85

功能描述

StrataFlash Wireless Memory

文件大小

1.69919 Mbytes

页面数量

106

生产厂商 Intel Corporation
企业简称

INTEL英特尔

中文名称

英特尔官网

原厂标识
数据手册

下载地址一下载地址二到原厂下载

更新时间

2025-7-4 23:00:00

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GE28F256L18B85价格和库存,欢迎联系客服免费人工找货

GE28F256L18B85规格书详情

The Intel StrataFlash® wireless memory (L18) device is the latest generation of Intel StrataFlash® memory devices featuring flexible, multiple-partition, dual operation. It provides high performance synchronous-burst read mode and asynchronous read mode using 1.8 V low voltage, multi-level cell (MLC) technology.

Product Features

■ High performance Read-While-Write/Erase

— 85 ns initial access

— 54 MHz with zero wait state, 14 ns clock-to-data output synchronous-burst mode

— 25 ns asynchronous-page mode

— 4-, 8-, 16-, and continuous-word burst mode

— Burst suspend

— Programmable WAIT configuration

— Buffered Enhanced Factory Programming (BEFP) at 5 µs/byte (Typ)

— 1.8 V low-power buffered programming at7 µs/byte (Typ)

■ Architecture

— Asymmetrically-blocked architecture

— Multiple 8-Mbit partitions: 64-Mbit and 128-Mbit devices

— Multiple 16-Mbit partitions: 256-Mbit devices

— Four 16-Kword parameter blocks: top or bottom configurations

— 64-Kword main blocks

— Dual-operation: Read-While-Write (RWW) or Read-While-Erase (RWE)

— Status Register for partition and device status

■ Power

— VCC (core) = 1.7 V - 2.0 V

— VCCQ (I/O) = 1.35 V - 2.0 V, 1.7 V - 2.0 V

— Standby current: 30 µA (Typ) for 256-Mbit

— 4-Word synchronous read current: 15 mA (Typ)at 54 MHz

— Automatic Power Savings mode

■ Security

— OTP space:

• 64 unique factory device identifier bits

• 64 user-programmable OTP bits

• Additional 2048 user-programmable OTP bits

— Absolute write protection: VPP = GND

— Power-transition erase/program lockout

— Individual zero-latency block locking

— Individual block lock-down

■ Software

— 20 µs (Typ) program suspend

— 20 µs (Typ) erase suspend

— Intel® Flash Data Integrator optimized

— Basic Command Set (BCS) and Extended Command Set (ECS) compatible

— Common Flash Interface (CFI) capable

■ Quality and Reliability

— Expanded temperature: –25° C to +85° C

— Minimum 100,000 erase cycles per block

— ETOX™ VIII process technology (0.13 µm)

■ Density and Packaging

— 64-, 128-, and 256-Mbit density in VF BGA packages

— 128/0 and 256/0 density in SCSP

— 16-bit wide data bus

产品属性

  • 型号:

    GE28F256L18B85

  • 制造商:

    INTEL

  • 制造商全称:

    Intel Corporation

  • 功能描述:

    StrataFlash Wireless Memory

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