首页 >GDR0604(1)>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
SwitchesCoreProgram | MACOMTyco Electronics 玛科姆技术方案控股有限公司 | MACOM | ||
SURFACEMOUNTINDUCTORSICSeries:PowerChokes | RFERFE international RFE国际公司RFE国际股份有限公司 | RFE | ||
OptiMOSTM5Power-Transistor,80V Features •OptimizedforhighperformanceSMPS,e.g.synchronousrectification •100avalanchetested •Superiorthermalresistance •N-channel,logiclevel •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
HIGHCURRENTISOLATEDRECTIFIERASSEMBLY | SEMTECHSemtech Corporation 升特 | SEMTECH | ||
HIGHCURRENTISOLATEDRECTIFIERASSEMBLY | SEMTECHSemtech Corporation 升特 | SEMTECH | ||
GRUBSCREWFIXING | ETCList of Unclassifed Manufacturers 未分类制造商 | ETC | ||
GRUBSCREWFIXING | ETCList of Unclassifed Manufacturers 未分类制造商 | ETC | ||
-60V(D-S)P-ChannelEnhancementModePowerMOSFET | MORESEMIMORE Semiconductor Company Limited 摩矽半导体摩矽半导体有限公司 | MORESEMI | ||
N-channelMOSFETLowon-stateresistance Description TheN0604NisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features •Lowon-stateresistance RDS(on)=6.5mΩMAX.(VGS=10V,ID=41A) •Lowinputcapacitance Ciss=4150pFTYP.(VDS=25V,VGS=0V) •Highcurr | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
SMDRFSIGNALCHOKE | FRONTIER Frontier Electronics | FRONTIER |
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