600V/ 7A Trench FS II Fast IGBT

Features ⚫ Trench FSII Technology Offering ⚫ Very low VCE(sat) ⚫ High speed switching ⚫ Positive temperature coefficient in VCE(sat) ⚫ Very tight parameter distribution ⚫ High ruggedness, temperature stable behavior Application ⚫ Air Condition ⚫ Inverters ⚫ Motor drives

文件：977.19 Kbytes 页数：7 Pages

LUGUANG

鲁光电子

N-Channel Enhancement Mode Field Effect Transistor

General Description These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy

文件：649.71 Kbytes 页数：7 Pages

HUASHAN

华汕电子器件

N-Channel Enhancement Mode Field Effect Transistor

General Description These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy

文件：622.12 Kbytes 页数：6 Pages

HUASHAN

华汕电子器件

600V N-Channel MOSFET

文件：828.44 Kbytes 页数：8 Pages

SEMIHOW