首页 >GD25Q21AOIGT>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
UniformSectorDualandQuadSerialFlash 1.FEATURES ◆2M-bitSerialFlash -256K-byte -256bytesperprogrammablepage ◆Standard,Dual,QuadSPI -StandardSPI:SCLK,CS#,SI,SO,WP#,HOLD# -DualSPI:SCLK,CS#,IO0,IO1,WP#,HOLD# -QuadSPI:SCLK,CS#,IO0,IO1,IO2,IO3 ◆HighSpeedClockFrequency -104MHzforfastreadwith3 | GigaDeviceBeijing Zhaoyi Innovation Technology Co., Ltd 兆易创新北京兆易创新科技股份有限公司 | GigaDevice | ||
UltraLowPower,2M/1M/512K-bitSerialMultiI/OFlashMemoryDatasheet 2Description The P25Q21H11H06HisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev | PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半导体(上海)有限公司 | PUYA | ||
UltraLowPower,2M/1M/512K-bitSerialMultiI/OFlashMemoryDatasheet 2Description The P25Q21H11H06HisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev | PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半导体(上海)有限公司 | PUYA | ||
UltraLowPower,2M/1M/512K-bitSerialMultiI/OFlashMemoryDatasheet 2Description The P25Q21H11H06HisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev | PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半导体(上海)有限公司 | PUYA | ||
UltraLowPower,2M/1M/512K-bitSerialMultiI/OFlashMemoryDatasheet 2Description The P25Q21H11H06HisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev | PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半导体(上海)有限公司 | PUYA | ||
UltraLowPower,2M/1M/512K-bitSerialMultiI/OFlashMemoryDatasheet 2Description The P25Q21H11H06HisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev | PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半导体(上海)有限公司 | PUYA | ||
UltraLowPower,2M/1M/512K-bitSerialMultiI/OFlashMemoryDatasheet 2Description The P25Q21H11H06HisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev | PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半导体(上海)有限公司 | PUYA | ||
UltraLowPower,2M/1M/512K-bitSerialMultiI/OFlashMemoryDatasheet 2Description The P25Q21H11H06HisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev | PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半导体(上海)有限公司 | PUYA | ||
UltraLowPower,2M/1M/512K-bitSerialMultiI/OFlashMemoryDatasheet 2Description The P25Q21H11H06HisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev | PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半导体(上海)有限公司 | PUYA | ||
UltraLowPower,2M/1M/512K-bitSerialMultiI/OFlashMemoryDatasheet 2Description The P25Q21H11H06HisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev | PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半导体(上海)有限公司 | PUYA | ||
UltraLowPower,2M/1M/512K-bitSerialMultiI/OFlashMemoryDatasheet 2Description The P25Q21H11H06HisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev | PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半导体(上海)有限公司 | PUYA | ||
UltraLowPower,2M/1M/512K-bitSerialMultiI/OFlashMemoryDatasheet 2Description The P25Q21H11H06HisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev | PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半导体(上海)有限公司 | PUYA | ||
UltraLowPower,2M/1M/512K-bitSerialMultiI/OFlashMemoryDatasheet 2Description The P25Q21H11H06HisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev | PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半导体(上海)有限公司 | PUYA | ||
UltraLowPower,2M/1M/512K-bitSerialMultiI/OFlashMemoryDatasheet 2Description The P25Q21H11H06HisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev | PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半导体(上海)有限公司 | PUYA | ||
UltraLowPower,2M/1M/512K-bitSerialMultiI/OFlashMemoryDatasheet 2Description The P25Q21H11H06HisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev | PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半导体(上海)有限公司 | PUYA | ||
UltraLowPower,2M/1M/512K-bitSerialMultiI/OFlashMemoryDatasheet 2Description The P25Q21H11H06HisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev | PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半导体(上海)有限公司 | PUYA | ||
UltraLowPower,2M/1M/512K-bitSerialMultiI/OFlashMemoryDatasheet 2Description The P25Q21H11H06HisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev | PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半导体(上海)有限公司 | PUYA | ||
UltraLowPower,2M/1M/512K-bitSerialMultiI/OFlashMemoryDatasheet 2Description The P25Q21H11H06HisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev | PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半导体(上海)有限公司 | PUYA | ||
UltraLowPower,2M/1M/512K-bitSerialMultiI/OFlashMemoryDatasheet 2Description The P25Q21H11H06HisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev | PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半导体(上海)有限公司 | PUYA | ||
UltraLowPower,2M/1M/512K-bitSerialMultiI/OFlashMemoryDatasheet 2Description The P25Q21H11H06HisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev | PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半导体(上海)有限公司 | PUYA |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
GD |
24+ |
SOP-8 |
90000 |
一级代理商进口原装现货、价格合理 |
询价 | ||
GD |
21+ |
USON8 |
12588 |
原装正品,自己库存 假一罚十 |
询价 | ||
GIGADEVIC |
15 |
SOP |
6000 |
绝对原装自己现货 |
询价 | ||
GIGADEVICE |
20+ |
SOP-8 |
11520 |
特价全新原装公司现货 |
询价 | ||
GIGADEVICE/兆易 |
23+ |
SOP8 |
90000 |
只做原装 |
询价 | ||
GIGADEVICE/兆易 |
2021+ |
SOP8 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
询价 | ||
GD |
21+ |
SOP8 |
20 |
原装现货假一赔十 |
询价 | ||
GD |
22+ |
SOP8 |
32350 |
原装正品 假一罚十 公司现货 |
询价 | ||
GD |
21+ |
SOP8 |
5000 |
原装现货/假一赔十/支持第三方检验 |
询价 | ||
GIGADEVICE/兆易 |
20+ |
SOP8 |
2399 |
全新原装现货 |
询价 |
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