首页 >GD25Q16ESJGR>规格书列表
| 零件型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
3V4M-BITSERIALNORFLASHWITHDUALANDQUADSPI | HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 华之美半导体深圳市华之美半导体有限公司 | HMSEMI | ||
3V4M-BITSERIALNORFLASHWITHDUALANDQUADSPI | HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 华之美半导体深圳市华之美半导体有限公司 | HMSEMI | ||
3V4M-BITSERIALNORFLASHWITHDUALANDQUADSPI | HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 华之美半导体深圳市华之美半导体有限公司 | HMSEMI | ||
UltraLowPower,16M-bit 2Description The P25Q16LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyofhighvolume consumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryintoembeddedor externalRAMforexecution.Theflexibleerasearchitectureofthedevice,with | PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉股份普冉半导体(上海)股份有限公司 | PUYA | ||
UltraLowPower,16M-bit 2Description The P25Q16LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyofhighvolume consumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryintoembeddedor externalRAMforexecution.Theflexibleerasearchitectureofthedevice,with | PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉股份普冉半导体(上海)股份有限公司 | PUYA | ||
UltraLowPower,16M-bit 2Description The P25Q16LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyofhighvolume consumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryintoembeddedor externalRAMforexecution.Theflexibleerasearchitectureofthedevice,with | PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉股份普冉半导体(上海)股份有限公司 | PUYA | ||
UltraLowPower,16M-bit 2Description The P25Q16LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyofhighvolume consumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryintoembeddedor externalRAMforexecution.Theflexibleerasearchitectureofthedevice,with | PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉股份普冉半导体(上海)股份有限公司 | PUYA | ||
UltraLowPower,16M-bit 2Description The P25Q16LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyofhighvolume consumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryintoembeddedor externalRAMforexecution.Theflexibleerasearchitectureofthedevice,with | PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉股份普冉半导体(上海)股份有限公司 | PUYA | ||
UltraLowPower,16M-bit 2Description The P25Q16LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyofhighvolume consumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryintoembeddedor externalRAMforexecution.Theflexibleerasearchitectureofthedevice,with | PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉股份普冉半导体(上海)股份有限公司 | PUYA | ||
UltraLowPower,16M-bit 2Description The P25Q16LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyofhighvolume consumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryintoembeddedor externalRAMforexecution.Theflexibleerasearchitectureofthedevice,with | PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉股份普冉半导体(上海)股份有限公司 | PUYA |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
GD(兆易创新) |
24+ |
NA/ |
8735 |
原厂直销,现货供应,账期支持! |
询价 | ||
GIG |
2405+ |
原厂封装 |
10000 |
只做原装优势现货库存 渠道可追溯 |
询价 | ||
GigaDevice Semiconductor (HK) |
23+/24+ |
8-SOIC |
8600 |
只供原装进口公司现货+可订货 |
询价 | ||
GIG |
2324+ |
10000 |
原装正品,超低价出售 |
询价 | |||
兆易创新 |
两年内 |
NA |
9355 |
实单价格可谈 |
询价 | ||
GD(兆易创新) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
询价 | ||
GD |
21+ |
SOP8 |
30000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
GD/兆易创新 |
22+ |
SOP8 |
25000 |
原装正品 |
询价 | ||
GIGADEVICE/兆易 |
23+ |
SOP8 |
22500 |
原厂原装正品 |
询价 | ||
GD/兆易创新 |
2324+ |
SOP-8-150mil |
78920 |
二十余载金牌老企,研究所优秀合供单位,您的原厂窗口 |
询价 |
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