Automotive-grade 390 V internally clamped IGBT ESCIS 180 mJ

Description This application-specific IGBT utilizes the most advanced PowerMESH technology optimized for coil driving in the harsh environment of automotive ignition systems. The device show very low on-state voltage and very high SCIS energy capability over a wide operating temperature range.

文件：466.49 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体

丝印：GD18N40LZ；Package：DPAK；Automotive-grade 390 V internally clamped IGBT ESCIS 180 mJ

Description This application-specific IGBT utilizes the most advanced PowerMESH technology optimized for coil driving in the harsh environment of automotive ignition systems. The device show very low on-state voltage and very high SCIS energy capability over a wide operating temperature range.

文件：466.49 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体

EAS 180 mJ - 390 V - internally clamped IGBT

文件：896 Kbytes 页数：19 Pages

STMICROELECTRONICS

意法半导体

Ignition IGBT 18 Amps, 400 Volts

文件：126.96 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

Ideal for Coil?뭥n?뭁lug Applications

文件：261.89 Kbytes 页数：9 Pages

LITTELFUSE

力特