GD18N40LZ中文资料意法半导体数据手册PDF规格书

厂商型号	GD18N40LZ
功能描述	Automotive-grade 390 V internally clamped IGBT ESCIS 180 mJ
文件大小	466.49 Kbytes
页面数量	16 页
生产厂商	STMicroelectronics
企业简称	STMICROELECTRONICS【意法半导体】
中文名称	意法半导体集团官网
原厂标识
数据手册	下载地址一下载地址二到原厂下载
更新时间	2025-8-3 15:01:00
人工找货	GD18N40LZ价格和库存，欢迎联系客服免费人工找货

描述 Description

This application-specific IGBT utilizes the most advanced PowerMESH technology

optimized for coil driving in the harsh environment of automotive ignition systems.

The device show very low on-state voltage and very high SCIS energy capability over

a wide operating temperature range. Moreover, ESD-protected logic level gate input

and an integrated gate resistor means no external protection circuitry is required.

特性 Features

• AEC-Q101 qualified

• SCIS energy of 180 mJ @ TC = 150 °C, L = 3 mH

• Parts are 100 tested in SCIS

• ESD gate-emitter protection

• Gate-collector high voltage clamping

• Logic level gate drive

• Very low saturation voltage

• High pulsed current capability

• Gate and gate-emitter resistor

Applications

• Pencil coil electronic ignition driver