GC9933中文资料Silicon & GaAs Schottky Diodes数据手册Microchip规格书

描述 Description

Schottky Barrier devices are currently available in single beamlead dual 'T' ring quad and bridge quad configurations. Devices are available in monolithic form for hybrid applications as well as in hermetic or non-hermetic packages. Monolithic devices are recommended for highest frequency broadband designs. The beamlead design eliminates the problems associated with wire bonding very small junction devices thus improving reliability and performance in MIC applications. Our in house epitaxy process capability insures repeatability for lowest conversion loss through Ku Band. A broad range of unique metallization schemes produce Microsemi's complete line of barrier heights. Diodes are currently available with barrier heights as low as 240 mV and up to 625 mV per junction. By optimizing epitaxy and metallization these devices achieve the lowest RS-CJ products resulting in exceptional conversion loss performance. High Reliability screening is available on packaged devices per your requirements.