GC9923中文资料Silicon & GaAs Schottky Diodes数据手册Microchip规格书

描述 Description

Schottky Barrier devices are currently available in single beamlead dual 'T' ring quad and bridge quad configurations. Devices are available in monolithic form for hybrid applications as well as in hermetic or non-hermetic packages. Monolithic devices are recommended for highest frequency broadband designs. The beamlead design eliminates the problems associated with wire bonding very small junction devices thus improving reliability and performance in MIC applications. Our in house epitaxy process capability insures repeatability for lowest conversion loss through Ku Band. A broad range of unique metallization schemes produce Microsemi's complete line of barrier heights. Diodes are currently available with barrier heights as low as 240 mV and up to 625 mV per junction. By optimizing epitaxy and metallization these devices achieve the lowest RS-CJ products resulting in exceptional conversion loss performance. High Reliability screening is available on packaged devices per your requirements.

简介

GC9923属于分立半导体产品的二极管-射频。由制造生产的GC9923二极管 - 射频射频二极管是一种双端子半导体器件，只允许一个方向通过电流，而限制反方向的电流。该系列器件用于射频匹配电路以进行电子调谐。二极管类型包括 PIN 型、肖特基型和标准型，反向电压范围为 1 至 15,000 V，电流范围为 10 mA 至 20A。