Dual N-Channel High Density Trench MOSFET (20V, 6.5A)

Gem-micro

晶群

Common-Drain Dual N-Channel MOSFET

Features • Advanced Trench Process Technology • High Density Cell Design for Ultra Low On-Resistance • Specially Designed for Li-ion battery packs use • Designed for battery-switch applications

文件：152.81 Kbytes 页数：5 Pages

GE

N-Channel Enhancement-Mode MOSFET Die

Features • Advanced Trench Process Technology • High Density Cell Design for Ultra Low On-Resistance • Fast Switching • High temperature soldering in accordance with CECC802/Reflow guaranteed • Logic Level • Ideal for Li ion battery pack applications

文件：88.87 Kbytes 页数：5 Pages

GE

Dual N-Channel Enhancement-Mode MOSFET (20V, 6.5A) (Battery Switch, ESD Protected)

Features • RDS(on)=32mΩ@VGS=2.5V, ID=5.5A • RDS(on)=24mΩ@VGS=4.5V, ID=6.5A • Advanced Trench Process Technology • High Density Cell Design for Ultra Low On-Resistance • Specially Designed for Li ion Battery Packs Use • Designed for Battery Switch Appliactions • ESD Protected

文件：47.29 Kbytes 页数：4 Pages

HSMC

华昕