600V N Channel SUPER JUNCTION MOSFET

Power MOSFETs find widespread use across various applications due to their low ON resistance, making them particularly appealing. By minimizing power dissipation, they contribute to cost reduction, smaller form factors, and less cooling requirements, resulting in significant enhancements for electro

GOFORD

谷峰半导体

N-Channel Enhancement Mode Power MOSFET

Description The GC380N60KE uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：897.17 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

N-Channel SuperFET짰 II MOSFET 600 V, 10.2 A, 380 m廓

文件：205.55 Kbytes 页数：9 Pages

Fairchild

仙童半导体

FCD380N60E N-Channel SuperFET II Easy-Drive MOSFET 600 V, 10.2 A, 380 m廓

文件：602.58 Kbytes 页数：9 Pages

Fairchild

仙童半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 10A@ TC=25℃ ·Drain Source Voltage : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.38Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

文件：353.51 Kbytes 页数：2 Pages

ISC

无锡固电