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HCTS374T

RadiationHardenedOctalD-TypeFlip-Flop,Three-State,PositiveEdgeTriggered

RadiationHardenedOctalD-TypeFlip-Flop,Three-State,PositiveEdgeTriggered Intersil’sSatelliteApplicationsFlowTM(SAF)devicesarefullytestedandguaranteedto100kRADtotaldose.TheseQMLClassTdevicesareprocessedtoastandardflowintendedtomeetthecostandshorterlead-time

Intersil

Intersil Corporation

HE374B

BroadbandAmplifier

BOWEIBOWEI Integrated Circuits CO.,LTD.

博威集成电路河北博威集成电路有限公司

HF374

SignalandRFRelays

MACOMTyco Electronics

玛科姆技术方案控股有限公司

HMC374

SMTPHEMTLOWNOISEAMPLIFIER,0.3-3.0GHz

GeneralDescription TheHMC374&HMC374EaregeneralpurposebroadbandLowNoiseAmplifiers(LNA)foruseinthe0.3-3GHzfrequencyrange.TheLNAprovides15dBofgainanda1.5dBnoisefigurefromasinglepositivesupplyof+2.75to+5.5V.Thelownoisefigurecoupledwithahigh

Hittite

Hittite Microwave Corporation

HMC374

SMTPHEMTLOWNOISEAMPLIFIER,0.3-3.0GHz

Hittite

Hittite Microwave Corporation

HMC374

SMTPHEMTLOWNOISEAMPLIFIER,0.3-3.0GHz

Features SingleSupply:Vdd=+2.75to+5.5V LowNoiseFigure:1.5dB HighOutputIP3:+37dBm NoExternalMatchingRequired TypicalApplications TheHMC374/HMC374Eisidealfor: •Cellular/PCS/3G •WCS,MMDS&ISM •FixedWireless&WLAN •PrivateLandMobileRadio

ADAnalog Devices

亚德诺亚德诺半导体技术有限公司

HMC374E

SMTPHEMTLOWNOISEAMPLIFIER,0.3-3.0GHz

Hittite

Hittite Microwave Corporation

HMC374E

SMTPHEMTLOWNOISEAMPLIFIER,0.3-3.0GHz

Features SingleSupply:Vdd=+2.75to+5.5V LowNoiseFigure:1.5dB HighOutputIP3:+37dBm NoExternalMatchingRequired TypicalApplications TheHMC374/HMC374Eisidealfor: •Cellular/PCS/3G •WCS,MMDS&ISM •FixedWireless&WLAN •PrivateLandMobileRadio

ADAnalog Devices

亚德诺亚德诺半导体技术有限公司

HMP374

IntrinsicallySafeHumidityandTemperatureTransmitters

Features •Intrinsicallysafe(Exi)for operationinuptoZone0/20 •MeasuresRHandT,andoutputs anextensiverangeofcalculated parameters •Designedforharshconditions •Temperaturerangebetween −70…+180°C(−94…+356°F) dependingontheprobeoption •VaisalaHUMICAPâ

VAISALAVaisala

维萨拉维萨拉(北京)测量技术有限公司

HVC374B

VariableCapacitanceDiodeforVCO

Features •HighcapacitanceratioandgoodC-Vlinearity. •Tobeusableatlowvoltage. •Lowoperationcurrent. •UltrasmallFlatLeadPackage(UFP)issuitableforsurfacemountdesign.

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

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