POWER GENERATION Harmonics Generator Varactors

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MICROSEMI

美高森美

EPITAXIAL PLANAR NPN TRANSISTOR (HIGH CURRENT)

HIGH CURRENT APPLICATION. FEATURES • Complementary to KTA1271.

文件：277.18 Kbytes 页数：2 Pages

KECKEC(Korea Electronics)

开益禧无锡开益禧半导体有限公司

SINGLE TMOS POWER MOSFET 4.9 AMPERES 20 VOLTS RDS(on) = 0.05 OHM

Medium Power Surface Mount Products TMOS Single P-Channel Field Effect Transistor Micro8 devices are an advanced series of power MOSFETs which utilize Motorola’s High Cell Density HDTMOS process to achieve lowest possible on–resistance per silicon area. They are capable of withstanding high ener

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MOTOROLA

摩托罗拉

P-Channel Enhancement-Mode Vertical DMOS FETs

These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperatur

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SUTEX