首页 >GC-170-7EA-A>规格书列表

零件编号下载 订购功能描述/丝印制造商 上传企业LOGO

BAV170-7-F

Low-LeakageDoubleDiode

Features: •PlasticSMDPackage •LowLeakageCurrent:Typ.3pA •SwitchingTime:Typ.0.8ms •ContinuousReverseVoltage:75VMax. •RepetitivePeakReverseVoltage:85VMax. •RepetitivePeakForwardCurrent:500mAMax. Applications: Low-leakagecurrentapplicationsinsurfacemountedc

MULTICOMPMulticomp Pro

易络盟易络盟电子(中国)有限公司

BAV170-7-F

DUALSURFACEMOUNTLOWLEAKAGEDIODE

DIODESDiodes Incorporated

美台半导体

BAV170-7-F

DUALSURFACEMOUNTLOWLEAKAGEDIODE

DIODESDiodes Incorporated

美台半导体

BAV170-7-F

DUALSURFACEMOUNTLOWLEAKAGEDIODE

Features •SurfaceMountPackageIdeallySuitedforAutomatedInsertion •VeryLowLeakageCurrent •Lead,HalogenandAntimonyFree,RoHSCompliant GreenDevice(Notes3and4) •QualifiedtoAEC-Q101StandardsforHighReliability

DIODESDiodes Incorporated

美台半导体

BAV170-7-F

DUALSURFACEMOUNTLOWLEAKAGEDIODE

Features •SurfaceMountPackageIdeallySuitedforAutomatedInsertion •VeryLowLeakageCurrent •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAntimonyFree.“Green”Device(Note3) •QualifiedtoAEC-Q101StandardsforHighReliability •PPAPCapable(Note

DIODESDiodes Incorporated

美台半导体

BAV170-7-F

DUALSURFACEMOUNTLOWLEAKAGEDIODE

DIODESDiodes Incorporated

美台半导体

MMBF170-7-F

N-CHANNELENHANCEMENTMODEMOSFET

DIODESDiodes Incorporated

美台半导体

MMBF170-7-F

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

DIODESDiodes Incorporated

美台半导体

MMBF170-7-F

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

DIODESDiodes Incorporated

美台半导体

供应商型号品牌批号封装库存备注价格