The GBC857 is designed for switching and AF amplifier application, suitable for automatic insertion in thick and thin-film circuits

文件：214.59 Kbytes 页数：2 Pages

ETL

亚历电子

PNP EPITAXIAL PLANAR TRANSISTOR

文件：212.83 Kbytes 页数：2 Pages

GTM

勤益投资控股

PNP EPITAXIAL PLANAR TRANSISTOR

GTM

勤益投资控股

NPN SILICON RF POWER TRANSISTOR

The RF Line NPN Silicon RF Power Transistor Designed for 24 Volt UHF large–signal, common emitter, class A linear amplifier applications in industrial and commercial equipment operating in the range of 800–960 MHz. • Specified for VCE = 24 Vdc, IC = 0.3 Adc Characteristics Output Power = 2.

文件：103.23 Kbytes 页数：6 Pages

MOTOROLA

摩托罗拉

Integrated Circuit Low-Noise JFET-Input Operational Amplifier

Description: The NTE857M and NTE857SM are low–noise JFET input operational amplifiers combining two state–of–the–art linear technologies on a single monolithic integrated circuit. Each internally compensated operational amplifier has well matched high voltage JFET input devices for low input of

文件：28.14 Kbytes 页数：3 Pages

NTE

Integrated Circuit Low-Noise JFET-Input Operational Amplifier

Description: The NTE857M and NTE857SM are low–noise JFET input operational amplifiers combining two state–of–the–art linear technologies on a single monolithic integrated circuit. Each internally compensated operational amplifier has well matched high voltage JFET input devices for low input of

文件：28.14 Kbytes 页数：3 Pages

NTE