The GBC817 is designed for switching and AF amplifier application, suitable for driver storages and low power output storages.

文件：211.61 Kbytes 页数：2 Pages

ETL

亚历电子

NPN EPITAXIAL PLANAR TRANSISTOR

文件：209.87 Kbytes 页数：2 Pages

GTM

勤益投资控股

NPN EPITAXIAL PLANAR TRANSISTOR

GTM

勤益投资控股

GLASS PASSIVATED JUNCTION FAST SWITCHING RECTIFIER

FEATURES ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ♦ High temperature metallurgically bonded construction ♦ Glass passivated cavity-free junction ♦ Capable of meeting environmental standards of MIL-S-19500 ♦ Fast switching for high efficiency ♦ 1.0 Amper

文件：63.58 Kbytes 页数：2 Pages

GE

Glass Passivated Junction Fast Switching Rectifier

FEATURES • Superectifier structure for high reliability condition • Cavity-free glass-passivated junction • Fast switching for high efficiency • Low leakage current • High forward surge capability • Solder dip 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified • Compliant to RoHS Dire

文件：75.6 Kbytes 页数：4 Pages

VISHAYVishay Siliconix

威世威世科技公司

Glass Passivated Junction Fast Switching Rectifier

FEATURES • Superectifier structure for high reliability condition • Cavity-free glass-passivated junction • Fast switching for high efficiency • Low leakage current • High forward surge capability • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of

文件：74.91 Kbytes 页数：4 Pages

VISHAYVishay Siliconix

威世威世科技公司