丝印：GB6；Package：DSBGA；LM4930 Boomer™ Audio Power Amplifier Series Audio Subsystem with Stereo Headphone & Mono Speaker Amplifiers

1FEATURES 23• 16-bit Resolution 48kHz Stereo DAC • 16-bit Resolution 8kHz Voice Codec • I2S Digital Audio Data Serial Interface • Two-wire Serial Control Interface • PCM Voice Audio Data Serial Interface • 25mW/channel Stereo Headphone Amplifier • 330mW Mono 8Ω Amplifier (at AVDD = 3.0V) •

文件：897.75 Kbytes 页数：40 Pages

TI

德州仪器

丝印：GB6；Package：DSBGA；LM4930 Boomer™ Audio Power Amplifier Series Audio Subsystem with Stereo Headphone & Mono Speaker Amplifiers

1FEATURES 23• 16-bit Resolution 48kHz Stereo DAC • 16-bit Resolution 8kHz Voice Codec • I2S Digital Audio Data Serial Interface • Two-wire Serial Control Interface • PCM Voice Audio Data Serial Interface • 25mW/channel Stereo Headphone Amplifier • 330mW Mono 8Ω Amplifier (at AVDD = 3.0V) •

文件：897.75 Kbytes 页数：40 Pages

TI

德州仪器

丝印：GB6；Package：SMA；60 V, 1 A low drop power Schottky rectifier

Features • Negligible switching losses • Low forward voltage drop • Surface mount miniature packages • Avalanche rated • ECOPACK2 compliant

文件：416.38 Kbytes 页数：19 Pages

STMICROELECTRONICS

意法半导体

丝印：GB6；Package：SSOP6-P-0.65A；Dual Inverter (Un-Buffer)

Features • High output current: ±8 mA (min) at VCC = 3.0 V • Super high speed operation: tpd = 1.9 ns (typ.) at VCC = 3.3 V, 15 pF • Operating voltage range: VCC = 0.9 to 3.6 V • 3.6-V tolerant inputs

文件：276.58 Kbytes 页数：6 Pages

TOSHIBA

东芝

丝印：GB640N25S；Package：TO-220；250V N-Ch Power MOSFET

Feature ◇High Speed Power Switching ◇Enhanced Body diode dv/dtcapability ◇EnhancedAvalanche Ruggedness ◇100% UIS Tested, 100% Rg Tested ◇Lead Free Application ◇Synchronous Rectification in SMPS ◇Hard Switching and High Speed Circuit ◇Power Tools ◇UPS ◇Motor Control

文件：886.5 Kbytes 页数：8 Pages

HUNTECK

恒泰柯半导体

丝印：GB640N25S；Package：TO-263；250V N-Ch Power MOSFET

Feature ◇High Speed Power Switching ◇Enhanced Body diode dv/dtcapability ◇EnhancedAvalanche Ruggedness ◇100% UIS Tested, 100% Rg Tested ◇Lead Free Application ◇Synchronous Rectification in SMPS ◇Hard Switching and High Speed Circuit ◇Power Tools ◇UPS ◇Motor Control

文件：886.5 Kbytes 页数：8 Pages

HUNTECK

恒泰柯半导体

丝印：GB640N25S；Package：TO-247；250V N-Ch Power MOSFET

Feature ◇High Speed Power Switching ◇Enhanced Body diode dv/dtcapability ◇EnhancedAvalanche Ruggedness ◇100% UIS Tested, 100% Rg Tested ◇Lead Free Application ◇Synchronous Rectification in SMPS ◇Hard Switching and High Speed Circuit ◇Power Tools ◇UPS ◇Motor Control

文件：886.5 Kbytes 页数：8 Pages

HUNTECK

恒泰柯半导体

650V/6A Trench Field Stop IGBT

Features： •High ruggedness performance •Very tight parameter distribution •Positive VCE (sat) temperature coefficient •High efficiency for motor control •Excellent current sharing in parallel operation •RoHS compliant Applications： •Home appliances •Motor drives •Fan, Pumps, Vacuum clean

文件：1.95385 Mbytes 页数：6 Pages

LUGUANG

鲁光电子

60W Single Output

文件：2.7474 Mbytes 页数：7 Pages

SLPOWER

Programmable Power Supplies

文件：88.4 Kbytes 页数：2 Pages

TDK

东电化