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GAL22V10D-25LPI

GAL22V10DeviceDatasheet

Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles

LatticeLattice Semiconductor

莱迪思莱迪思半导体公司

GAL22V10D-25LPI

AllDevicesDiscontinued

LatticeLattice Semiconductor

莱迪思莱迪思半导体公司

GAL22V10D-25LPI

HighPerformanceE2CMOSPLDGenericArrayLogic

Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles

LatticeLattice Semiconductor

莱迪思莱迪思半导体公司

GAL22V10D-25LPI

ProductChangeNotifications(PCNs)havebeenissuedtodiscontinuealldevicesinthisdatasheet.

Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchl

LatticeLattice Semiconductor

莱迪思莱迪思半导体公司

GAL22V10D-25LPI

AllDevicesDiscontinued

LatticeLattice Semiconductor

莱迪思莱迪思半导体公司

GAL22V10D-25LPN

AllDevicesDiscontinued

LatticeLattice Semiconductor

莱迪思莱迪思半导体公司

GAL22V10D-25LPN

AllDevicesDiscontinued

LatticeLattice Semiconductor

莱迪思莱迪思半导体公司

GAL22V10D-25LPN

GAL22V10DeviceDatasheet

Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles

LatticeLattice Semiconductor

莱迪思莱迪思半导体公司

GAL22V10D-25LPN

ProductChangeNotifications(PCNs)havebeenissuedtodiscontinuealldevicesinthisdatasheet.

Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchl

LatticeLattice Semiconductor

莱迪思莱迪思半导体公司

GAL22V10D-25LPNI

ProductChangeNotifications(PCNs)havebeenissuedtodiscontinuealldevicesinthisdatasheet.

Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchl

LatticeLattice Semiconductor

莱迪思莱迪思半导体公司

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