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GAL22V10D-25LJ

HighPerformanceE2CMOSPLDGenericArrayLogic

Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles

LatticeLattice Semiconductor Corporation

莱迪思半导体

GAL22V10D-25LJ

AllDevicesDiscontinued

LatticeLattice Semiconductor Corporation

莱迪思半导体

GAL22V10D-25LJ

AllDevicesDiscontinued

LatticeLattice Semiconductor Corporation

莱迪思半导体

GAL22V10D-25LJ

GAL22V10DeviceDatasheet

Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles

LatticeLattice Semiconductor Corporation

莱迪思半导体

GAL22V10D-25LJ

ProductChangeNotifications(PCNs)havebeenissuedtodiscontinuealldevicesinthisdatasheet.

Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchl

LatticeLattice Semiconductor Corporation

莱迪思半导体

GAL22V10D-25LJI

AllDevicesDiscontinued

LatticeLattice Semiconductor Corporation

莱迪思半导体

GAL22V10D-25LJI

AllDevicesDiscontinued

LatticeLattice Semiconductor Corporation

莱迪思半导体

GAL22V10D-25LJI

ProductChangeNotifications(PCNs)havebeenissuedtodiscontinuealldevicesinthisdatasheet.

Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchl

LatticeLattice Semiconductor Corporation

莱迪思半导体

GAL22V10D-25LJI

HighPerformanceE2CMOSPLDGenericArrayLogic

Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles

LatticeLattice Semiconductor Corporation

莱迪思半导体

GAL22V10D-25LJI

GAL22V10DeviceDatasheet

Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles

LatticeLattice Semiconductor Corporation

莱迪思半导体

GAL22V10D-25LJN

AllDevicesDiscontinued

LatticeLattice Semiconductor Corporation

莱迪思半导体

GAL22V10D-25LJN

GAL22V10DeviceDatasheet

Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles

LatticeLattice Semiconductor Corporation

莱迪思半导体

GAL22V10D-25LJN

ProductChangeNotifications(PCNs)havebeenissuedtodiscontinuealldevicesinthisdatasheet.

Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchl

LatticeLattice Semiconductor Corporation

莱迪思半导体

GAL22V10D-25LJN

AllDevicesDiscontinued

LatticeLattice Semiconductor Corporation

莱迪思半导体

GAL22V10D-25LJNI

AllDevicesDiscontinued

LatticeLattice Semiconductor Corporation

莱迪思半导体

GAL22V10D-25LJNI

ProductChangeNotifications(PCNs)havebeenissuedtodiscontinuealldevicesinthisdatasheet.

Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchl

LatticeLattice Semiconductor Corporation

莱迪思半导体

GAL22V10D-25LJNI

AllDevicesDiscontinued

LatticeLattice Semiconductor Corporation

莱迪思半导体

GAL22V10D-25LJNI

GAL22V10DeviceDatasheet

Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles

LatticeLattice Semiconductor Corporation

莱迪思半导体

GAL22V10D-25LP

GAL22V10DeviceDatasheet

Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles

LatticeLattice Semiconductor Corporation

莱迪思半导体

GAL22V10D-25LP

AllDevicesDiscontinued

LatticeLattice Semiconductor Corporation

莱迪思半导体

供应商型号品牌批号封装库存备注价格
LATTICE
23+
DIP-24窄
22585
##公司主营品牌长期供应100%原装现货可含税提供技术
询价
A
E430
DIP
3
询价
2015+
QFP
19889
一级代理原装现货,特价热卖!
询价
Amphenol/Spectra-Strip
2308+
472548
一级代理,原装正品,公司现货!
询价
23+
N/A
49000
正品授权货源可靠
询价
INFINEON/英飞凌
23+
TO-251
50000
全新原装正品现货,支持订货
询价
INFINEON/英飞凌
2022
TO-251
80000
原装现货,OEM渠道,欢迎咨询
询价
Infineon/英飞凌
22+
20000
全新、原装、现货
询价
INFINEON/英飞凌
22+
TO-251
10000
只做原装,支持实单
询价
INFINEON/英飞凌
23+
TO-251
10000
全新原装现货库存
询价
更多GAC22V10D-25LJ供应商 更新时间2024-4-29 14:08:00